Comparison of CaF2 and LiF measurements of energy deposition rates in materials irradiated in a large 60Co facility
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Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...
There is a need for chemically resistant coatings that protect the exposed surface of microfluidics components. Pinhole free films with low stress and a good uniformity on flat and inclined surfaces are required. In this study, amorphous silicon carbide (S ...
We present a MEMS process for the fabrication of arbitrary (adaptable to specific aperture geometries) stabilization of silicon nitride membranes to be used as miniature shadow masks or (nano) stencils. Stabilization was realized by the fabrication of sili ...
We have developed a novel strategy for localized electrochemical deposition (LECD) to improve both the lateral resolution of the process and the porosity of the fabricated high-aspect-ratio microstructures. The strategy is based on accurately controlling t ...
We report on a study of pentacene thin-films grown by high vacuum deposition on silicon dioxide, using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The nucleation density of pentacene islands on SiO2is found to rise ...
Understanding the growth mechanism in molecular organic thin films is fundamental to their applications in organic electronics. We present an extensive study of the growth mechanism of pentacene thin films on silicon dioxide (SiO2) using atomic ...
Oriented films of tetracene and pentacene have been obtained by high vacuum sublimation onto oriented poly(tetrafluoroethylene) (PTFE) substrates. Polymorphism, orientation, and morphology of the pentacene and tetracene films are studied as a function of d ...
Island densities and island sizes can be varied or even tailored by choice of external parameters in molecular beam epitaxy, i.e.: by the choice of substrate temperature. deposition rate, and coverage. We present a comprehensive study of the nucleation kin ...
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
ECOLE POLYTECHNIQUE FEDERALE LAUSANNE (ECOL-Non-standard) BENVENUTI G (BENV-Individual) AMOROSI S (AMOR-Individual) HALARY-WAGNER E (HALA-Individual)2002
GaN and AlxGa1-xN alloys were grown by gas sourer molecular beam epitaxy using NH3. High quality GaN layers with smooth surfaces being obtained, reflection high-energy electron diffraction (RHEED) can be used to monitor the growth. The oscillations of the ...
