Wafer-Scale Fabrication of Thin SiN Membranes and Au Films and Membranes with Arrays of Sub-um Holes Using Nanosphere Lithography
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Selective Ga + ion implantation and miring by focused ion beam exposure and subsequent wet chemical etching is used to fabricate micro/nanomechanical elements in Si. Freestanding elements with a ~ 30 nm membrane thickness are made by controlled selective u ...
We describe a new O-ring setup for wet-etching processes of microelectromechanical systems (MEMS) . Our new low-cost approach using siloxane-based seal rings entails the single-side etching of silicon and silicon dioxide using potassium hydroxide and buffe ...
Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical mechanisms during platinum etching by a dual frequency ECR/RF reactor have been investigated. An ion be ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
Ferroelectric thin films for memory and MEMS applications require noble metal or refractory metal oxide electrodes. In this paper, physical and chemical parameters during etching of RuO2 and Pr by a dual frequency ECR/RF reactor have been investigated. The ...
Ferroelectric capacitive devices for memory and MEMS applications require patterned ferroelectric thin films with high anisotropic etched features. In this paper, physical and chemical parameters during etching of Pb(Zr0.53Ti0.47)O-3 (PZT) by a dual freque ...
The fabrication, characterization and application of polyimide-based flexible microelectrodes for recording from and stimulation of biological tissue are described. The planar electrodes consist of a polyimide-platinum-polyimide sandwich structure with a t ...
Detailed investigations of the limits of a new negative-tone near-UV resist (IBM SU-8) have been performed. SU-8 is an epoxy-based resist designed specifically for ultrathick, high-aspect-ratio MEMS-type applications. We have demonstrated that with single- ...
Raman scattering by coupled LO phonon-plasmon modes in p-type GaN layers has been measured for different hole densities up to 3 x 10(18) cm(-3) Both axial and planar coupled modes were clearly observed. The breakdown of usual selection rules for the planar ...
A carbon-based interdigitated electrode array (IDA) was fabricated by photolithographic patterning of RF sputtered thin-film carbon layers. The IDAs consisted of 125 pairs having the finger width of 2.5 μm and 1.5 μm gap. The electrochemical behavior of th ...