Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs: A complementary study
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High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs wi ...
Ammonia has been used to grow GaN layers by molecular beam epitaxy on c-plane sapphire substrates. The ratio of nitrogen to Ga active species, i.e., the actual V/III ratio, has been varied from 1 to 4. It is found that increasing the V/III ratio improves t ...
We report on the investigation of In surface segregation in GaInP/GaAs and GaInAs/GaAs heterostructures grown by chemical beam epitaxy (CBE). Owing to the peculiarities of CBE growth, it is shown that In segregation can be quantitatively evaluated in real- ...
We have studied the indium and gallium incorporation during growth by chemical beam epitaxy of GaInAs, GaInP and GaInAsP alloys. TMIn, TEGa, cracked AsH3 and PH3 sources were used. The indium incorporation ratio remains nearly constant over the range of pa ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
GaN layers were grown by gas-source-molecular beam epitaxy on sapphire substrates using ammonia as a nitrogen source. The nitridation of an Al2O3 surface prior to the GaN growth was followed in situ by reflection high-energy electron diffraction. A strong ...
The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable v ...
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detect ...
