Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)
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GaN quantum dots (QDs) in an AlN matrix have been grown on Si(111) by molecular-beam epitaxy. The growth of GaN deposited at 800 degrees C on AlN has been investigated in situ by reflection high-energy electron diffraction. It is found that a growth interr ...
In this paper, the RBS phenomenon is described and experimental results concerning Bragg reflectors and microcavities grown on silicon substrates by molecular beam epitaxy are presented. This spectroscopy is not sensitive to (i) the lateral fluctuation of ...
Shallow donors in GaN epilayers grown by metalorganic chemical vapour deposition (MOCVD) and by molecular beam epitaxy (MBE) on sapphire, SiC and GaN substrates have been studied by selectively excited photoluminescence (SPL) and far-infrared (FIR) absorpt ...
Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The str ...
NH3 is used as a nitrogen precursor for growing III-V nitride materials by molecular beam epitaxy on c-plane sapphire substrates. The sapphire nitridation step is followed in situ by reflection high-energy electron diffraction. Subsequently, it is demonstr ...
In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed ou ...
Due to the peculiarities of the growth process of GaN and related alloys on sapphire substrates, reflection high-energy electron diffraction (RHEED) is not sufficient to correctly monitor all the different steps of molecular beam epitaxy growth (MBE). It i ...
The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (X ...
The polarity of GaN epilayers grown by molecular beam epitaxy is controlled using Mg. This is achieved by simultaneously exposing the surface to Mg and NH3 fluxes during growth interruption. Reflection high-energy electron diffraction (RHEED) indicates the ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
