Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures
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We present a correlation between the behaviour of the RHEED specular reflected beam intensity during the initial phases of growth, the MBE growth conditions (T(s), P(As4), V(GaAs)), and the surface morphology examined by Nomarski contrast microscopy after ...
The local deposition of metal structures by thermal dissociation of trimethylaluminium, dimethylzinc and dimethylcadmium on GaAs surfaces heated by a CW krypton laser has been investigated. Piles of amorphous aluminium and zinc and crystalline structures o ...
We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their f ...
In order to delay the occurrence of the 2D-3D growth mode transition in highly strained InxGa1-xAs epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass transport at the surface should be reduced. This can be achieved by increasing the g ...
We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a ...
Room‐temperature photoreflectance (PR) measurements have been used to investigate the optical transition energies in InxGa1−xAs/GaAs strained layer superlattice structures grown by molecular‐beam epitaxy (MBE). Sharp PR features indicating excellent optica ...
We have studied the indium and gallium incorporation during growth by chemical beam epitaxy of GaInAs, GaInP and GaInAsP alloys. TMIn, TEGa, cracked AsH3 and PH3 sources were used. The indium incorporation ratio remains nearly constant over the range of pa ...
We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their fo ...
Quantitative Secondary Ion Mass Spectrometry (SIMS) determination of oxygen incorporation in epitaxial AlGaAs/GaAs layers is strongly affected by the presence of oxygen adsorbed on the surface. By flooding the sample with oxygen isotope O18 during the anal ...