Optical and structural properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy
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We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...
The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak refl ...
InGaN/GaN single quantum wells (SQWs) are grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The InGaN material quality is optimized through the photoluminescence (PL) properties. It is found that the growth temperature is critical for ...
In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and hi ...
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dyn ...
Thermally detected optical absorption (TDOA) and photoluminescence experiments were carried out on InGaN/GaN multi-quantum well (MQW) structures grown by molecular beam epitaxy on (0001) sapphire substrates. The absorption coefficient of the QW was extract ...
Metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular beam epitaxy. Field distribution and collection efficiency were studied with the ion beam induced charge collection method. The results were explained by numer ...
The control of the GaN-polarity is promising in view of achieving periodic polarity structures for non-linear optics. It is shown here that the polarity of GaN(0 0 0 1) epilayers can be reversed from Ga to N using a high Mg doping during molecular beam epi ...
We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (AI,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a lo ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
