MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization
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We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...
Localization phenomena related to the fluctuating band potential profile of the InGaN alloy were investigated via hydrostatic pressure dependent measurements of luminescence of an InGaN quantum structure. We examine the suitability of the hydrostatic press ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (AI,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a lo ...
High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitt ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...
Wurtzitic nitride quantum wells grown along the (0001) axis experience a large Stark effect induced by the differences of spontaneous and piezoelectric polarizations between the well and barrier materials. In AlxGa1-xN/GaN quantum wells, due to the adverse ...
Individual pillars were etched from a sample embedding a single plane of GaN/AlN quantum dots, deposited by molecular beam epitaxy on a sapphire substrate. Pillars with diameters ranging from 0.1 to 5 mum were fabricated by electron-beam lithography and Si ...
The control of the GaN-polarity is promising in view of achieving periodic polarity structures for non-linear optics. It is shown here that the polarity of GaN(0 0 0 1) epilayers can be reversed from Ga to N using a high Mg doping during molecular beam epi ...