Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy
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Ion-coordinating ruthenium complexes [cis-Ru(dcbpy)(L)(NCS)(2), where dcbpy is 4,4'-dicarboxylic acid-2,2'-bipyridine and L is 1,4,7,10-tetraoxa-13-azacyclopentadecane, JK-121, or bis(2-(2-methoxy-ethoxy)ethyl) amine, JK-122] have been synthesized and char ...
Optical fiber materials with broad-band gain in the visible or in the telecommunication window are of great interest for optical communication or the biomedical domain in order to built integrated tunable lasers, amplifiers, ultra-short pulse lasers, or br ...
Dye-sensitized solar cells (DSCs) are considered as an emerging technology in order to replace conventional silicon solar cells or thin film solar cells such as amorphous silicon, CIGS, and CdTe. Liquid electrolytes containing iodide/triiodide redox couple ...
We have demonstrated a GaN/AlGaN quantum cascade detector based on a simplified design of the extractor region relying on an AlGaN thick layer. The device grown by molecular beam epitaxy exhibits both TM-polarized intersubband absorption and photocurrent a ...
This is the second part of two articles reporting investigation on a thermal-detector-type far-infrared sensor operating in the 8–14 µm wavelength region using Low-Pressure Chemical Vapor Deposition (LPCVD) deposited low-stress Si-rich nitride (SiN) membra ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
There has been a very strong development of the sensors based on surface plasmon resonance during the last thirty years, mostly for biological and biomedical applications. If the first experiments in this field were carried out at the beginning of the 20t ...
700nm parametric conversion in silica fiber from near-infrared to short-wave infrared band is reported for the first time. The conversion efficiency in excess of 40dB was measured between 1300nm signal and 2000nm idler band. ...
This is the first part of the two articles reporting investigation of a thermal detector-type far-infrared sensor operating in the 8–14µm wavelength, using Low-Pressure-Chemical-Vapor-Deposition (LPCVD)- deposited low-stress Si-rich nitride (SiN)membrane a ...
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...
