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Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

Publications associées (35)

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Printed array of thin-dielectric metal-oxide-metal (MOM) tunneling diodes

Dirk Grundler, Hagen Klauk

A large area array of metal-oxide-metal (MOM) tunneling diodes with an ultrathin dielectric (∼3.6 nm aluminum oxide) have been fabricated via a transfer-printing process. The MOM diodes exhibit an excellent tunneling behavior that is suitable for rectifyin ...

American Institute of Physics2011

Herein we report a theoretical study of diode-like behavior of negatively charged (e.g., glass or silica) nanopores at different potential scan rates (1-1000 V center dot s(-1)). Finite element simulations were used to determine current-voltage characteris ...

2011

Actuated Transitory Metal-Ligand Bond As Tunable Electromechanical Switch

Klaus Kern

Electrically tunable molecules are highly attractive for the construction of molecular devices, such as switches, transistors, or machines. Here, we present a novel nanomechanical element triggered by an electrical bias as external stimulus. We demonstrate ...

2010

Current and voltage ADC using a differential pair of single-electron bipolar avalanche transistors

Radivoje Popovic, Marc Lany

Single-electron bipolar avalanche transistors (SEBATs) enable current sensing by electron counting at room temperature. Here, differential SEBAT circuits combining the functions of amplification and analog-to-digital (A/D) conversion are proposed and chara ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Search for nuclear magnetic resonance evidence of spin accumulation

Aurore Rudolf

Developments towards an understanding of the nature of conductance at the interface between two different metallic layers – ferromagnetic and non magnetic – as well as the discovery of giant magnetoresistance have stirred attention from both the scientific ...

EPFL2009

A magnetic field sensor for measuring a direction of a magnetic field in a plane comprises a sensing structure (4) comprising a ring-shaped well (10), a plurality of contacts (11) of equal size placed at equal distance from each other along the ring-shaped ...

2008

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Igor Stolichnov, Didier Bouvet, Giovanni Antonio Salvatore, Sebastian Riester, Roman Gysel

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

The contact resistance distribution among the current-carrying elements of three ITER conductor terminations is measured in the JORDI (JOint Resistance DIstribution) test facility at CRPP. One sample is based on Nb3Sn strands, the other two are NbTi cable- ...

2007

Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer

Joseph Duron, Bertrand Dutoit

The adjunction of constrictions along the meander of a superconducting Fault Current Limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for ...

2007

Beyond the linearity of current-voltage characteristics in multiwalled carbon nanotubes

László Forró, Csilla Mikó

We present local and non-local electron transport measurements on individual multi-wall nanotubes for bias voltages between 0 and about 4 V. Local current–voltage characteristics are quite linear. In contrast, non-local measurements are highly nonlinear; t ...

2006