GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy
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We report a cathodoluminescence (CL) study at helium temperature of oval defects on quantum well (QW) structures grown by molecular beam epitaxy (MBE). We collected the luminescence emitted both from the facet shaped defect and from the defect free growth ...
Three diamond workers had occupational asthma attributed to the inhalation of cobalt powder. The exposure originated from high speed polishing disks with an abrasive consisting of microdiamonds cemented in extra fine cobalt not alloyed to tungsten carbide. ...
Wurtzite GaN was grown by gas source molecular beam epitaxy on (0001) sapphire substrates. Taking advantage of the catalytic decomposition of ammonia on the growing surface, high growth rates (>1 mu m/h) were achieved for substrate temperatures ranging bet ...
Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaIn ...
We report on the investigation of In surface segregation in GaInP/GaAs and GaInAs/GaAs heterostructures grown by chemical beam epitaxy (CBE). Owing to the peculiarities of CBE growth, it is shown that In segregation can be quantitatively evaluated in real- ...
GaN layers were grown by gas-source-molecular beam epitaxy on sapphire substrates using ammonia as a nitrogen source. The nitridation of an Al2O3 surface prior to the GaN growth was followed in situ by reflection high-energy electron diffraction. A strong ...
Diamond growth on a (100) oriented Si substrate by a laser-induced chem. transport reaction (LICTR) method is described. SEM indicated that the LICTR-deposited diamonds had a cubic structure. Their Raman spectrum obsd. at Stokes shifts between 1300 and 137 ...
We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their f ...
