Strain-induced interface instability in GaN/AlN multiple quantum wells
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We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emissi ...
The formation mechanisms, structure and optoelectronic properties of Ga(In)As/(Al)GaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. With this approach, it is possible ...
Exciton reflectivity from GaN/AlxGa1-xN quantum wells (QWs) shows broad peaks that are difficult to analyze within a conventional single-free-exciton model. We have applied a new formalism that allows us to separate numerically radiative and inhomogeneous ...
A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the pre ...
Multicolor, multi-quantum well light emitting diodes have been fabricated by molecular beam epitaxy by inserting quantum wells of various widths in the active region. The In content of the wells is 15%-20% and the color is governed by carrier confinement a ...
When AxGa1-xAs layers are grown on V-grooved GaAs substrates by metal organic chemical vapour deposition (MOCVD), a Ga rich vertical quantum well (VQW) appears in the V-groove centre. The width and Ga enrichment of this structure depend on the nominal Al c ...
We have studied the influence of hydrostatic pressure on the light emission from a strained GaN/AlGaN multiquantum well system. We have found that the pressure coefficients of the photoluminescence peak energies are dramatically reduced with respect to tha ...
Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with i ...
