Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
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A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
We present results on the polarization-resolved photoluminescence emitted from InGaAs/AlGaAs single quantum dots (QDs) grown in inverted tetrahedral pyramids. The emitted light was detected for two mutually perpendicular linear polarization directions in t ...
Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures with a near-singular density of states. Implemented as the active medium in a diode laser their unique properties lead to improved and often novel characteris ...
In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed ou ...
Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advant ...
The influence of the basic growth parameters (growth temperature, V/III ratio and growth rate) on the surface morphology of AIN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrate is reported. Optimized-growth conditions lead to a significant d ...
The approximative single-band effective mass model for calculating the electronic structure and optical properties of flat quantum dots was introduced. The comparison with more accurate model has shown the applicability of the approximations. The method ha ...
We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with incre ...
GaN/AlN quantum dots grown by molecular beam epitaxy either on silicon (111), sapphire or 6H-SiC (0001) substrate have been investigated using photoluminescence, cathodoluminescence, Fourier transform infrared spectroscopy and attenuated total reflection s ...