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A fully functional arrangement of a 2×1 array of active and self-detecting cantilevers, stress sensing metal-oxide-semiconductor transistors and thermal bimorph actuators was introduced. One of the two cantilevers was used as a reference while the other on ...
Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted C ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located on the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
A process to fabricate functional polysilicon structures above large (4 x 4 mm(2)) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrif ...
This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFET, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining o ...
A monolithic silicon integrated optical micro-scanner is presented. The device consists of a mirror located an the tip of a thermal bimorph actuator beam. The fabrication process is very simple and compatible with IC fabrication techniques. The device is e ...
In this paper we analyse a new type of silicon strain sensor based on the piezo- tunneling effect in a silicon lateral backward diode. The implantation profiles of the junction have been optimised to obtain a prevailing tunneling current at the reverse bia ...
A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the devic ...
We present a fully integrated Mach-Zehnder interferometer in silicon-on- insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative ...
