Cathodoluminescence And Transmission Electron-Microscopy Study Of Island Formation On Inas/Inp Qw Structures During Growth Interruptions
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We present results obtained both with scanning electron microscopy (SEM) in the cathodoluminescence (CL) mode and transmission electron microscopy (TEM) on ZnCdSe/ZnSe electron-beam-pumped laser structures. This investigation aims at establishing a relatio ...
We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their fo ...
The strain contrasts associated with three-dimensional coherently strained islands formed during the epitaxial growth of highly strained In0.45Ga0.55As layers on GaAs (001) have been studied by transmission electron-microscopy. It is demonstrated that the ...
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GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
It is demonstrated by using reflection high-energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1-xAs (x>0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation ...
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We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a ...
CoNiCu/Cu superlattice nanowires have been grown by electrodeposition in nuclear tracketched nanoporous membranes. Transmission electron microscopy (TEM) images show a good layer structure and allow an estimate of the current efficiency. Current perpendicu ...
The analysis of the sapphire surface nitridation by in situ reflection high-energy electron diffraction evidences the formation of a relaxed AIN layer. Its role on the early stage of the GaN growth is investigated by transmission electron microscopy (TEM). ...