A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors
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We studied polarization switching of 295 nm thick -oriented-Pb(Zr0.45Ti0.55)O-3 (PZT) thin-film capacitors through a polarization hysteresis loop and piezoelectric force microscopy (PFM) on top of the Pt electrode. Positive voltage pulses of 450 kV/cm ...
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O-3 (PZT)-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d(33)-loop measurements in individual ...
PbZrxTi1-xO3 (x=0.45) and PbxCa1-xTiO3 (PCT) (x=0.75) porous thin films were deposited on platinized silicon wafers by chemical solution deposition route using a polymer as a volatile phase. The introduction of pores creates a matrix-void composite resulti ...
The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...
The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...
The direct observation of blocked polarization domains at the electrode-ferroelectric interface of electrically fatigued ferroelectric films is reported. Blocked nanodomains are believed to be the origin of polarization fatigue in ferroelectric nonvolatile ...
