8 mW Fundamental Mode Output of Wafer-Fused VCSELs Emitting in the 1550-nm Band
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This PhD thesis work describes the study of III-nitride based planar microcavities operating in the strong coupling regime at room temperature. The aim is to use the nonlinear emission properties of such samples in realistic devices. Furthermore these stud ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, co ...
This thesis addresses general aspects of the operation of a coupled-cavity vertical surface-emitting laser (CC-VCSEL) which consists of two active cavities optically coupled and independently electrically pumped. The first two chapters of the thesis deal w ...
This invention pertains to light emitting materials comprising novel ortho-metalated transition metal complexes [C^N] 2 ML comprising two orthometalated ligands having imidazole moieties and an ancillary ligand of ²-diketonate type. It has been surprisingl ...
Abstract of WO2007042474 This invention pertains to light emitting materials comprising novel ortho-metalated transition metal complexes [C^N]2ML, comprising chelate monoionic ligands (L), also called ancillary ligands. It has been surprisingly found that ...
It was about 125 years ago that the light bulb was commercialized by Thomas Edison. No doubt a brilliant invention at the time, today its low power conversion efficiency is one of the reasons why lighting in the western world has such high energy consumpti ...
A blue resonant cavity light emitting diode with a 50% Al-content crack-free GaN/AlGaN distributed Bragg reflector is reported. The structure shows excellent optical properties and the benefits of the cavity structure are clearly seen in the narrowed spect ...
Thin, single semi conducting layer of GaInN, possibly containing a small percentage of arsenic, phosphorus or antimony, the said layer emitting at least two visible lights with determined colours which can be combined, particularly to obtain white light. M ...