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Effect of Stacking Order on the Electric-Field Induced Carrier Modulation in Graphene Bilayers

Publications associées (39)

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Graphene-based Field-effect Transistors

Adarsh Singh Sagar

With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...

EPFL2011

Electron Spin Resonance Study of Graphene

Luka Ciric

Graphene, a honeycomb lattice of a single atom thick plane of carbon atoms has captivated the attention of physicists, materials scientists, and engineers because of its extraordinary physical properties. These include exceedingly high charge carrier mobil ...

EPFL2011

Femtosecond carrier dynamics in bulk graphite and graphene paper

Majed Chergui, Fabrizio Carbone, Frank van Mourik, Andrea Cannizzo, Gerald Auböck

Femtosecond white-light continuum probe transient absorption and reflectivity measurements of bulk graphite and graphene paper are reported. In graphite, the relaxation of photoinduced electron–hole pairs happens through in-plane electron–electron and elec ...

Elsevier2011

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Klaus Kern, Ralf Thomas Weitz, Isabella Gierz

The application of graphene in electronic devices requires large-scale epitaxial growth. The presence of the substrate, however, usually reduces the charge-carrier mobility considerably. We show that it is possible to decouple the partially sp(3)-hybridize ...

2010

Image potential states as a quantum probe of graphene interfaces

Klaus Kern

Image potential states (IPSs) are electronic states localized in front of a surface in a potential well, formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid, a doub ...

2010

Near-edge x-ray absorption fine-structure investigation of graphene

Marco Grioni, Daniela Pacilè

We report the near-edge x-ray absorption fine-structure (NEXAFS) spectrum of a single layer of graphite (graphene) obtained by micromechanical cleavage of highly ordered pyrolytic graphite on a SiO2 substrate. We utilized a photoemission electron microscop ...

American Physical Society2008

Spatial modulation of the Dirac gap in epitaxial graphene

Klaus Kern

We use scanning tunneling spectroscopy (STS) at low temperatures to investigate the local electronic structure of mono- and bilayer graphene grown epitaxially on SiC(0001). Already for monolayer graphene, a gap opening is observed in the pi-bands at the Di ...

2008

Magnetism in disordered graphene and irradiated graphite

Oleg Yazyev

The magnetic properties of disordered graphene and irradiated graphite are systematically studied using a combination of mean-field Hubbard model and first-principles calculations. By considering large-scale disordered models of graphene, I conclude that o ...

2008

Contact and edge effects in graphene devices

Klaus Kern, Marko Burghard, Kannan Balasubramanian, Ralf Thomas Weitz, Eduardo Jian Hua Lee

Electrical transport studies on graphene have been focused mainly on the linear dispersion region around the Fermi level(1,2) and, in particular, on the effects associated with the quasiparticles in graphene behaving as relativistic particles known as Dira ...

2008