Synthesis parameter space of bismuth catalyzed germanium nanowires
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Barium titanate is a very promising material for the integration of optical communication into electronic integrated circuits. For a successful integration into CMOS compatible technology, a growth process has to be found which allows forming crystalline B ...
High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed f ...
This thesis presents our studies on nanostructures growth and magnetism, mainly based on scanning tunneling microscopy (STM), magneto-optical Kerr effect (MOKE), and x-ray magnetic circular dichroism (XMCD) measurements. In most of these experiments, nanos ...
Nanowire superconducting single photon detectors (SSPDs) [1] are characterized by very high sensitivity in the near infrared (detection efficiency η up to 30%, for a dark count rate DK of few Hz), speed (up to ∼1 GHz repetition rate) and time resolution (j ...
A growth model for the low pressure chemical vapor deposition (LPCVD) of polycrystalline ZnO thin films is proposed. This model is based on experimental observations of the surface morphology and crystallographic orientations of the layers at different thi ...
We study the growth of silicon nanowires (SiNWs) by chemical vapor deposition (CVD) with aluminum as catalyst. We show that for a growth temperature of 600 °C, the silicon precursor partial pressure (SiH 4 in this study) is a key parameter for controlling ...
The synthesis of horizontal porous anodic alumina (PAA) structures with individually addressable channel systems is demonstrated. This was achieved by developing a multicontact design of aluminum finger structures (two to Five contacts) on silicon wafers. ...
We analyzed along this work the feasibility to produce high quality alumina thin films by High Vacuum Chemical Vapor Deposition (HV-CVD). We study the influence of various parameters on the growth process and on the film quality, such as substrate temperat ...
Erbium-doped amorphous aluminum oxide layers deposited on Si or oxidized silicon substrates are promising construction pieces for future monolytic integrated optoelectronics devices. In a novel high-vacuum chemical vapor deposition setup the alumina films ...
DC reactive magnetron sputtering was used for the deposition of Zr–Si–N thin films. Four series of samples have been deposited at various substrate temperatures TS: 300 K, 510 K, 710 K and 910 K. Depending on TS, different N2 partial pressures pN2 were req ...