Highly Anisotropic Dirac Cones in Epitaxial Graphene Modulated by an Island Superlattice
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
It is shown that during the growth of InxGa1-xAs on GaAs, the strain-induced lattice distortion oscillates as a function of monolayer completion in both purely 2D and quasi-2D layer-by-layer growth regimes. This is explained by considering that nontetragon ...
We perform a near-field mapping of Bloch Surface Waves excited at the truncation interface of a planar silicon nitride multilayer. We directly determine the field distribution of Bloch Surface Waves along the propagation direction and normally to the surfa ...
We investigate the electronic coupling between copper hexadecafluoro-phthalocyanine (F16CuPc) and epitaxial graphene (EG) on 6H-SiC (0001) using a combined approach of low-temperature scanning tunneling spectroscopy and electronic structure calculations. T ...
Image potential states (IPSs) are electronic states localized in front of a surface in a potential well, formed by the surface projected bulk band gap on one side and the image potential barrier on the other. In the limit of a two-dimensional solid, a doub ...
We use scanning tunneling spectroscopy (STS) at low temperatures to investigate the local electronic structure of mono- and bilayer graphene grown epitaxially on SiC(0001). Already for monolayer graphene, a gap opening is observed in the pi-bands at the Di ...
In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...
Valence- and conduction-band offsets can be induced at GaAs(100) polar homojunctions by means of ultrathin Si intralayers. The microscopic interface dipole responsible for the creation of such offsets can be varied by changing the Si intralayer thickness; ...
