Scanning Tunneling Microscopy and Luminescence of Individual Nanostructures

A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in future applications. A unique tool for the study of such structures are scanning probe methods. These methods do not only allow to obtain atomic scale information in both topographic and spectroscopic measurements at surfaces, but can also be employed for example to stimulate local photon emission. In this thesis the growth mechanism of inorganic and organic semiconductor nanostructures and the relation between their local structure and their electronic and optical properties is investigated by scanning probe techniques. In the first part of this thesis, the growth as well as the local electronic and morphologic properties of InAs/GaAs(001) quantum dots grown by molecular beam epitaxy are described. The recorded spectra show evidence of the discretization of the density of states that can be attributed to the zero dimensional confinement of charge carriers to the quantum dots. Moreover, the shape evolution of the quantum dots during the controlled removal of material through an in situ etching gas is studied. High resolution topographic images reveal that hereby an island shape transition takes place. This shape evolution is found to be the reverse of the shape evolution that typically takes place during the growth, indicating that thermodynamic factors play an important role during the growth process and the etching process. In addition, the mechanism of the material removal from the quantum dots is investigated in detail by the analysis of the size evolution of the islands as a function of the nominal amount of etched material. The second part of this thesis is dedicated to the study of individual CdSe nanowires grown by the solution-liquid-solid approach. These nanowires consist of small alternating sections of wurtzite and zincblende lattice structures. This structural arrangement also leads to an alternating electronic structure in the form of a type II band alignment along the long axis of the nanowires. The local electronic properties of the nanowires are analyzed by scanning tunneling spectroscopy. Tunneling current induced luminescence spectra from individual nanowires are acquired by the injection of holes and electrons and their subsequent radiative recombination. In contrast to previous studies on similar systems, the coupling of tip induced plasmons to the radiation process is not required. The shape and the position of the luminescence spectra is compared to photoluminescence spectra and Raman measurements. The photon energy is found to decrease with increasing wire diameter indicating quantum confinement of the charge carriers to the wire. The bulk bandgap, that can be extrapolated from the energy vs. diameter dependence of the emission peaks, indicates that the photons are emitted from zincblende type CdSe sections. Moreover, the diameter dependence reveals that the emission stems from carriers that are confined to quantum dot like parts of the wires. The lack of light emission from the wurtzite type segments is also re ected in the appearance of non-luminescent regions in the NW as shown by spatially resolved light intensity maps. Possible mechanisms for the light excitation are discussed. The investigation of single molecules of the luminescent organic emitter tris-(2-phenylpyridine)iridium(III) (Ir(ppy)3) is the topic of the last part of this thesis. To this end, Ir(ppy)3 molecules are deposited onto metal substrates and different types of thin insulating layers. Besides their structural and electronic characterization, the optical properties of single molecules are studied by tunneling current induced luminescence. No intrinsic light emission originating from the molecules can be observed neither on metal substrates nor on thin insulating layers. This indicates that in these systems, the molecules are still not sufficiently decoupled from the underlying metallic substrate. Preliminary results of tunneling current induced luminescence measurements of Ir(ppy)3 molecules on multilayers of C60 show great promise for exciting light emission on single molecules.

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is generated by the bandgap difference for the two materials (∼ 0.4 eV for InAs, and ∼ 1.4 eV for GaAs) which provides a minimum of potential energy for both electrons and holes inside the InAs nanoparticle. The appearance of new nanoscale effects modifies the electro-optical properties of such a system which makes possible the improvement of existing device performance or even fascinating novel device applications. For the creation of coherent structures with very high purity and high density, as it is required for application in light emitting devices, self-assembling is a very important pathway. The quantum dot creation mostly relies on the relaxation of the strain accumulated during the growth of lattice mismatched materials, which happens in a non-equlibrium condition. This results in a statistical distribution of all the parameters characterizing the InAs nanocrystals as size, composition and strain, whose direct manifestation is the inhomogeneously broadened light emission deriving from quantum dot ensembles. At the dawning of the quantum dot development the broadening was considered as a limiting factor for application in semiconductor lasers. Today, it is considered favorably for all the applications where a broad gain spectrum is required as optical amplifiers, monolithic and external-cavity tunable lasers, and superluminescent diodes. The objective of this thesis is the application of InAs/GaAs self-assembled quantum dots to the active region of high power and broad-band superluminescent diodes emitting in the 1.3 μm wavelength region. Superluminescent diodes are edge-emitting semiconductor light sources based on the amplification of spontaneous emission along a waveguide where optical gain is achieved through current injection. They combine the high power and brightness of laser diodes with the low coherence of LEDs. The latter is a fundamental feature for the application in optical coherence tomography medical imaging, where the image resolution is related to the spectral bandwidth of the light source used. The achievement of bandwidths larger than 100 nm are demonstrated in this work through the optimization of molecular beam epitaxy growth conditions. This may be done optimizing the statistical size-dispersion of the dot ensemble, or through the use of different dot layers emitting at slightly different wavelengths. The large bandwidth emission is obtained also due to the peculiar energy structure of this material, for which a multi-state emission appears under particular injection conditions. As a term of comparison, best commercial single-chip superluminescent diodes for the imaging application at 1.3 μm show bandwidths around 60 nm. Moreover, the discrete nature of the energy levels in InAs quantum dots together with the implementation of a GaAs-based technology can be beneficial for the device temperature stability (the competing technology, based on InP, suffers from strong thermal degradation). The analysis and understanding of the device temperature characteristics will be detailed in the last chapter of the manuscript. Even though standard devices show an important temperature dependence, a better stability may be achieved through the use of p-doped active regions. In the last few years quantum dot devices have shown outstanding properties if compared to the competing quantum well technology. Low threshold currents, high temperature stability and low chirp in lasers, large bandwidths and low gain saturation in amplifiers have been demonstrated. However, in spite of the large interest among the scientific community, many of the microscopic processes at the origin of the electro-optical characteristics of this material are not completely understood yet. The physics of the quantum dot active material, will be modeled in this work through the use of systems of rate equations with different complexity depending on the system they are applied to. We will provide a mean-field rate equation model allowing to get insights about carrier dynamics in QD lasers. Also, we will develop two different traveling-wave rate equation models, one for the modeling of the L-I characteristics and the other for the modeling of the spectral characteristics of quantum dot superluminescent diodes. Considering the carrier and photon density distributions across the device cavity is essential in superluminescent diodes, where the high single pass gain results in large non-homogeneities of photon and carrier distributions. The work is motivated by an industrial cooperation with EXALOS AG, a leading company in the development, manufacturing, and sales of broadband superluminescent diodes.

EPFL2007

Scanning Tunneling Luminescence of Pentacene Nanocrystals

Alexander Kabakchiev

Organic semiconductors are promising materials for future electronic and electroluminescence applications. A detailed understanding of organic layers and nano-sized crystals down to single molecules can address fundamental questions of contacting organic semiconductors at the nanometer limit and obtaining luminescence from them. In this thesis, electroluminescence spectra from pentacene, a policyclic hydrocarbon (acene), are discussed. The luminescence is induced by the current from the tip of a scanning tunneling microscope (STM). Pentacene is an organic semiconductor which gained a lot of attention in technology because of its electronic properties suitable for applications in thin film devices. Moreover, recent fundamental studies employed pentacene as a standard to demonstrate sub-molecular resolution by scanning probe techniques. This work reports the first observation of light emission from nanometer-sized pentacene crystals grown on an ultrathin insulating layer on noble metal surfaces. Different STM-techniques are combined to characterize the individual systems studied with respect to topography, crystal structure, electronic properties and work function changes. The initial step of the project was the implementation of an optical system for light collection from the tunnel-junction of a low-temperature STM. In the set-up, a novel approach based on the use of in situ adjustable lenses has been realized. Three lenses placed in the vicinity of the tip-apex allow light collection into three independent channels which can be used for versatile optical analysis. An important part in the characterization of the organic system was to clarify the interaction between adsorbed molecules and substrates. We investigated individual pentacene molecules on different ultrathin insulator-metal systems. With the STM tip in tunnel contact, the molecules are situated in a double barrier junction formed by the insulating layer on one side and the vacuum gap on the other side. The metal surface and the STM-tip form the electrodes. The electronic properties of pentacene in this configuration have been characterized. Insulator-metal-systems, which provide a good electronic decoupling for pentacene from the metal, have been chosen as substrates for the growth of pentacene nanocrystals. Using the sub-molecular resolution of the STM we resolved the structure of the top-layer of the pentacene nanocrystals and found that the crystal phase agrees with the pentacene bulk structure. Moreover, the comparison of charge injection barriers between individual molecules and nanocrystals of pentacene indicates a significant change of electronic properties after the formation of ordered structure from the individual building blocks. Optical spectroscopy of the emitted light reveals an excitonic emission from the nanocrystals, which is in very good agreement with photoemission spectra of macroscopic crystals. Although a highly localized current-injection by the STM tip is used for excitation, it can be concluded that the source of light emission is delocalized. In contrast to luminescence measurements reported for other organic materials in STM, the excitation is not localized on the individual molecule, into which a charge is injected by the STM-tip. Our study indicates the importance of inter-molecular coupling leading to a high mobility of the excited state which has to be considered in the framework of STM-induced luminescence. A further result is the observation of the Stark shift of pentacene luminescence, that has so far not been measured at large electric fields of the order of 1V/nm. The evaluation of the Stark shift provides information on dipole and polarizability change during the decay of an exciton. The measured large dipole change of the lowest singlet exciton in pentacene indicates a mixing of the Frenkel exciton (FE) with a small contribution of charge-transfer (CT). Finally, we developed a set-up for photon correlation measurements in the STM. The properties of photon statistics is a means which can unambiguously prove that the luminescence is due to a single-photon source, i.e. a light source which emits no more than one photon at a time. A typical example of such a source is the emission from a single molecule. We performed photon correlations measurements of the luminescence from pentacene and C60 nanocrystals. While the excitonic bulk emission of pentacene is not expected to represent a single photon emitter, we also did not observe anticorrelations in the case of C60 indicating the importance of the local environment in the STM-junction, e.g. the short distance to the metal electrodes.

EPFL2010

Scanning Tunneling Luminescence of Pentacene Nanocrystals

Alexander Kabakchiev

EPFL2010

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

EPFL2007