Enhanced Thermal Destruction of Anthracene Vapor upon Laser Irradiation at 248 nm in the 150-800 DegC Range
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The measurement of the tokamak plasma ion temperature can be obtained by collective Thomson scattering. This method requires a far infrared laser to achieve useful spatial resolution for typical tokamak plasma parameters. The very low Thomson scattering cr ...
N-type GaAs substrates have been exposed to zinc atmospheres at 600-800 deg.C and focused light from a Kr-ion laser at 647.1 nm. Etch pits are generated at optical densities of 0.2-10 KW/cm2 and exposure times of 5-60 minutes. They are characterised by a s ...
Laser generated defects in (Al,Ga) As have been investigated by photochemical wet etching and TEM measurements. Photoetching reveals a 500 nm wide zone in the center of the processed area where according to laser power either a luminescent or a nonradiativ ...
Springer-Verlag (Springer Series in Chemical Physics 39)1984
New luminescence centers can be generated by irradiating AlxGa1-xAs structures with focused light from a CW Kr-ion laser operated at 647 nm. The luminescence centers are generated at a laser power density of 0.5 MW/cm2. Regions as small as 0.8 μm wide a ...
The feasibility of a new, 2-laser, isotope sepn. scheme was tested. The 1st laser induces isotopically selective condensation in the collisional region of a free jet of SF6 dild. in Ar. Thus, a mol. beam contg. non-clustered 32SF6 and clustered 34SF6{m}Ar{ ...
SF6 in a free jet was vibrationally excited by a continuous-wave CO2 laser. The subsequent energy transfer processes, in which vibrational energy is degraded, lead to changes in the beam's spatial, velocity and cluster-size distributions. These changes wer ...
The deposition of Ga on quartz substrates by photodissociation of trimethylgallium has been investigated. Light from a frequency doubled Ar-ion laser beam (257.2 nm) was focused onto quartz substrates. The Ar-ion laser was operated under CW or mode-locking ...
The stripe junction geometry of laser diodes is produced by laser alloying. The application of such diodes is restricted by nonlinearities of the light-current characteristics, by transients and multimode operation. In the future, they might be replaced by ...
A new luminescence band is observed in optically pumped Ge-doped (Al,Ga)As multilayer structures, that were previously subjected to laser irradiation. The band is shifted by 90 meV to longer wavelength with respect to the luminescence peak of the unexposed ...
A mol. beam mass spectrometer was constructed to study the formation of van der Waals clusters over a wide mass range. Using this app. (SF6)m was detected with 1 ? m ? 100 in the adiabatic expansion of SF6. By irradiating the SF6 jet with a continuous-wave ...