Enhancement of microcrystalline n-i-p solar cell performance via use of pre-covering layers and H-2 treatment

We study the effects of a-Si:H and mu c-Si:H covering layers and an H-2 treatment on the characteristics of mu c-Si:H thin film solar cells deposited in open single chamber very high frequency plasma enhanced chemical vapor deposition systems. Secondary ion mass spectrometry is used to evaluate the phosphor concentration in the mu c-Si:H material. Compared to use of an a-Si:H covering layer, use of a pc-Si:H covering layer reduces dopant contamination by a relative 50%, and improves efficiency by a relative 6%, and use of an H-2 treatment reduces dopant contamination by a relative 64%, and improves efficiency by a relative 17%. (C) 2011 Elsevier B.V. All rights reserved.

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Christophe Ballif, Franz-Josef Haug, Xavier Niquille, Vanessa Terrazzoni-Daudrix
Elsevier, 2011
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https://infoscience.epfl.ch/record/171183?ln=fr

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The development of high performance SnO2:F as TCOs for thin film silicon solar cells

Christophe Ballif, Laura Ding, Sylvain Nicolay

High performance transparent conducting oxides (TCOs) have significance for optimising photovoltaic (PV) performance. The efficiency of the resulting solar cells is dependent particularly on achieving high light scattering, low resistivity and low absorption (via low FCA). These properties have been targeted by systematic exploration of the atmospheric pressure chemical vapour deposition growth parameters, in particularly the deposition temperature and growth rate. APCVD processes are particularly suited to use in industry due to the high volume, continuous growth processes and fast growth rates achievable. Using the APCVD process, F-doped SnO2 has been deposited on glass using monobutyl tin trichloride with trifluoro-acetic acid as the dopant source. The deposited films were characterised for crystallinity, morphology (roughness), optical haze and electrical properties (via Hall measurement) to aid optimisation of material suitable for solar cells. Samples were then used in manufacture of single a-Si:H solar cells, which showed enhanced performance, in comparison to commercially available TCO CVD coated glasses, with high quantum efficiency yield. (C) 2012 Elsevier B.V. All rights reserved.

Elsevier2012

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Towards Very Low-Cost Mass Production of Thin-film Silicon Photovoltaic (PV) Solar Modules on Glass

Arvind Shah

Production volume of PV modules increases at > 35% per year, but one is yet far from making a global impact on energy supply. One of the obstacles is given by the present high production costs of PV modules. A possibility to reduce costs are thin-film PV modules on glass. The specific option of thin-film silicon is considered. The combination of amorphous and microcrystalline silicon thin films within a tandem solar cell corresponds to a theoretical optimum. In practice, stabilized efficiencies of 10% to 12% have so far been obtained in the laboratory with such tandem solar cells. Silicon being a material with an indirect band gap, its absorption coefficient is relatively low, and therefore light management in the solar cell has to be further optimized. Thin-film silicon can be deposited by plasma-enhanced CVD, as used for AM-LCD displays. The use of modified fabrication equipment from the AM-LCD Display Industry is therefore a promising way to implement low-cost mass production. © 2005 Elsevier B.V. All rights reserved.

2006

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Facile preparation of micron- and nano-scale textured master for nano-imprinting front electrode in thin-film silicon tandem cells with improved light trapping

Christophe Ballif, Franz-Josef Haug, Jinhua Huang, Etienne Antoine Julien Moulin

This paper reports a facile method to prepare a textured surface with combined micron- and nano-scale surface features, which is used as master for nano-imprinting process to obtain transparent front electrodes in thin-film silicon tandem cells. The micron- and nano-scale surface features of the master are formed by combination of SiO2 sphere pre-deposition and ZnO textured growth. The master exhibits an averaged total transmittance value of 89.7% and an averaged haze value of 54.1% for the wavelength from 380 to 1100 urn. Comparing to the flat reference cell, the thin-film Si tandem cell deposited on the superstrate prepared using this master shows substantial decrease in reflectance at long wavelengths and drastic gain in the photocurrent of the bottom cell, the maximum summed current is enhanced by 35.5%, and the convert efficiency is improved from 8% to 10.0 +/- 0.3%. (C) 2015 Elsevier Ltd. All rights reserved.

Elsevier2015

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