Plasma Spray-CVD: A New Thermal Spray Process to Produce Thin Films from Liquid or Gaseous Precursors

New dedicated coating processes which are based on the well-known LPPS (TM) technology but operating at lower work pressure (100 Pa) are being actively developed. These hybrid technologies contribute to improve the efficiencies in the turbine industry such as aero-engines and land-based gas turbines. They also have a great potential in the domain of new energy concepts in applications like Solid Oxide Fuel Cells, membranes, and photovoltaic with the adoption of new ways of producing coatings by thermal spray. Such processes include Plasma Spray-Thin Film (PS-TF) which gives the possibility to coat thin and dense layers from splats through a classical thermal spray approach but at high velocities (400-800 m/s) and enthalpy (8000-15000 kJ/kg). Plasma Spray-PVD (PS-PVD) which allows producing thick columnar-structured Thermal Barrier Coatings (100-300 mu m) from the vapor phase with the employment of the high enthalpy gun and specific powder feedstock material. On the other hand, the Plasma Spray-CVD (PS-CVD) process uses modified conventional thermal spray components operated below 100 Pa which allows producing CVD-like coatings (< 1-10 mu m) at higher deposition rates using liquid or gaseous precursors as feedstock material. The advantages of such thermal spray-enhanced CVD processes are the high ionization degree and high throughput for the deposition of thin layers. In this article, we present an overview of the possibilities and limitations encountered while producing thin film coatings using liquid and gaseous precursors with this new type of low pressure plasma spray equipment and point out the challenges faced to obtain efficient injection and mixing of the precursors in the plasma jet. In particular, SiO (x) thin films from Hexamethyldisiloxane (HMDSO or C6H18OSi2) can be deposited on wafers at deposition rates of up to 35 nm/s at an efficiency of about 50%. The process was also used for producing metal oxide coatings (Al2O3, ZnO, and SnO2) by evaporating different metals in combination with an oxygen gas flow. The effect of process parameters on the deposition rate, coating build up, uniformity, and quality of the coatings are discussed. An overview of different potential applications of this new technology will be also presented.

Mechanisms of films and coatings formation from gaseous and liquid precursors with low pressure plasma spray equipment

Malko Gindrat, Philippe Frédérique Bruno Guittienne, Christoph Hollenstein

Plasma spraying is a well developed and widely used technology, successfully applied for ceramic and metal coatings in many fields of applications such as aeronautics, gas turbine, automotive or medical. The coatings obtained are usually intentionally porous and thick (more than 100 pm). Presently, thin films (

Elsevier2009

Plasma Jet-Substrate Interaction in Low Pressure Plasma Spray-CVD Processes

Malko Gindrat, Philippe Frédérique Bruno Guittienne, Christoph Hollenstein

Conventional equipment for plasma spraying can be adapted for operation at low pressure so that PECVD-like processing can be performed. The plasma jet generated by the torch is characterized by a high convective velocity and a high gas temperature. The influence of these properties on a deposition process are investigated in the framework of simple theoretical considerations and illustrated by various experimental results obtained with SiOx deposition. A conclusion of this study is that the deposition process is dominated by diffusion effects on the substrate surface: the deposition profiles and the deposition rates are determined by the precursor density and by the gas temperature on the substrate surface. The high velocity of the jet does not play a direct role in the deposition mechanism. On the other hand it strongly increases the precursor density available for the deposition since it efficiently transports the precursor up to the substrate.

Springer US2012

Study of radio-frequency plasma deposition of amorphous silicon for the improvement of solar cell production

Juliette Ballutaud

Plasma enhanced chemical vapour deposition (PECVD) of thin films such as amorphous silicon has widespread applications especially in the field of photovoltaic solar cells and thin-film transistors for flat screen production. Industrial applications require high depositions rates over large areas with a good uniformity in layer thickness. In this thesis, some aspects of PECVD in large surface, industrial type, capacitive radio frequency reactor are investigated. The aim of this work is to study the plasma process conditions to increase the deposition rate of uniform, good quality, a-Si:H layer for solar cell application in a single chamber reactor. The studies realized during this thesis have necessitated the development and the comprehension of diagnostics such as deposition rate measurement by in-situ interferometry, plasma power measurement and layer density measurement by ellipsometry. During the thesis, we have also elaborated a matching-box circuit for using process frequencies of 27.12 MHz and 40.68 MHz. Deposition of a-Si:H in small electrode gap reactor has been studied. At present industrial reactors have a standard electrode gap of 2.4 cm. We modified a reactor to reach a small gap of 1.7 cm. It appears that we have obtained faster deposition rate in the small gap reactor but non-uniformity problems increase due to edge focusing and powder effects. One solution, based on a teflon jigsaw to keep the plasma away from the edge confined spaces, is proposed to suppress focusing effect but the operation parameter space is still reduced by the powder effect. Systematic measurements of a-Si:H layer density was also done by ellipsometry. It is shown that the layer density decreases when the deposition rate increases, independently of pressure, gas flow and frequency (27.12 MHz/40.68 MHz) of the plasma. At high deposition rate, 6 Å/s, only an increase of the process temperature from 200°C to 230°C can significantly improve the layer density. We have noted also a slight improvement of layer density for layers deposited in the small gap reactor. Nevertheless industrial constraints impose a process temperature of 200°C and a standard gap reactor. By optimising the process parameters, keeping the temperature process at 200°C, good quality, uniform, a-Si:H layer were deposited at 3 Å/s on 37 cm × 47 cm glass substrates at 40.68 MHz. A particular source of non-uniformity in large area reactor has been examined. In large area reactors, a perturbation in RF plasma potential, due to the electrode edge asymmetry, propagates towards the plasma center with a characteristic damping length λ. The variation of RF plasma potential at the edge implies a variation of the deposition rate across the reactor area and then a non-uniformity of the deposited layer. A theoretical study was done to understand of this phenomenon and experimental results confirmed the model. Finally, for solar cell applications, a study of the boron cross-contamination during solar cell deposition in a single chamber process has been done. During the deposition of the intrinsic layer, for a p-i-n cell, i-layer is contaminated by the residual boron radicals present in the reactor after the deposition of the boron-doped layer. This contamination decreases cell performance. Several reactor treatments have been tested to solve this contamination problem. The effectiveness of these treatments was evaluated by secondary ion mass microscopy (SIMS) measurements. It appears that an ammonia flush or a water vapour flush of a few minutes, between the deposition of the p-layer and i-layer, reduces the boron contamination at the p-i interface. The performance of cells made with these treatments, in a single chamber process, are comparable to performance of cells done in a multi-chamber process.

EPFL2004

Study of radio-frequency plasma deposition of amorphous silicon for the improvement of solar cell production

Juliette Ballutaud

EPFL2004