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SWNT array resonant gate MOS transistor

Publications associées (40)

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An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

Mihai Adrian Ionescu, Giovanni Antonio Salvatore, Alexandru Rusu

In this paper we report the fabrication and detailed electrical characterization of a ferroelectric transistor (Fe-FET) aiming at the extraction of its physical threshold voltage. The investigated transistors are fabricated on doped bulk silicon with a gat ...

2010

Development of stencil lithography for nanopatterning and for electronic and biosensing applications

Oscar Vazquez Mena

This work presents analyses and developments in nanofabrication using stencil lithography and its application for electronics and biosensing. Metallic nanostructures are fabricated using stencil lithography studying the pattern transfer from the stencil to ...

EPFL2010

We present a new design of a mass sensor capable of detecting mass values in the zeptogram range. The sensor comprises a resonant beam and two gate electrodes used to oscillate the beam at its resonance frequency. The detection method is based on the tunne ...

World Scientific And Engineering Acad And Soc, Ag Loannou Theologou 17-23, 15773 Zographou, Athens, Greece2010

Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films

Andreas Nöth

Thin Film Bulk Acoustic Wave Resonators (TFBARs) had been developed a decade ago and since then were implemented extensively in mobile communications devices. The "heart" of a TFBAR consists of a piezoelectric film that operates as an acousto-electric tran ...

EPFL2009

Scanning photocurrent microscopy of carbon nanostructures

In this thesis, the electronic structures of low-dimensional carbon allotropes have been studied. In particular, the spatially-resolved photocurrent responses of devices comprising carbon nanostructures were investigated through scanning photocurrent micro ...

EPFL2009

Scanning gate microscopy measurements on a superconducting single-electron transistor

Nico de Rooij, Kaspar Suter

We present measurements on a superconducting single-electron transistor (SET) in which the metallic tip of a low-temperature scanning force microscope is used as a movable gate. We characterize the SET through charge stability diagram measurements and comp ...

2009

The mid-infrared range is of interest in spectroscopic applications, due to the large number of organic compounds that exhibit characteristic absorption bands in this spectral region. Semiconductor technology, however, has been developed mainly for the nea ...

ETH2009

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Klaus Kern, Hagen Klauk, Marko Burghard, Ralf Thomas Weitz

The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon technology beyond conventional scaling limits and as a way to implement high-speed devices and cir ...

2009

The influences of trapped charges on carrier transport in carbon nanotubes (CNTs) are studied using CNT field-effect transistors with a partial top-gate and a global back-gate. Trapped charges induced by the global back-gate voltage sweeping (+/- 20 V) pro ...

2008

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

Mihai Adrian Ionescu, Dimitrios Tsamados, Yogesh Singh Chauhan, Christoph Eggimann

An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage, and t ...

2008