Gate dependent photocurrents at a graphene p-n junction

We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate voltages between the two Dirac points of the oppositely doped graphene regions. The gate dependence of this signal agrees well with simulations based upon the Fermi level difference between the two differently doped sections. It is concluded that the photocurrent maps are dominated by the built-in electric field, with only a minor photothermoelectric contribution. (C) 2010 American Institute of Physics. [doi:10.1063/1.3505926]

Electromagnetic Environment Associated with Lightning Strikes to Tall Strike Objects

Seyed Abbas Mosaddeghi

The study of the lightning interaction with tall strike objects has attracted considerable attention of lightning researchers lately. Many lightning measurements including current and associated electromagnetic fields were recently made all over the globe namely in Russia, South Africa, Germany, Brazil, Japan, and Austria. It is a novel area of studies, and the resolution of associated questions will have an impact upon many lightning-related applications such as lightning protection and the determination of lightning parameters from remote field measurements. The main objective of the thesis is to carry out further theoretical investigations and experimental measurements to understand and elucidate recently raised questions on the characteristics of lightning return-strokes to tall structures and their associated electromagnetic radiation. Chapter 2 presents a review on recent progress in the modeling of lightning strikes to tall towers and associated experimental data obtained during the last decade or so. Two types of return stroke models namely the Engineering Models, and the Electromagnetic or Antenna-Theory (AT) models, extended to take into account the presence of a tall strike object are discussed. The Chapter contains also a description of the computational methods for the evaluation of electromagnetic fields generated by a lightning strike to a tall structure, as well as an overview of available data on lightning current and associated electromagnetic fields. The chapter finally highlights some important questions raised by different research groups in the past few years which call for further investigations. These questions are as follows: No systematic theoretical analysis nor experimental data are available for electromagnetic fields in the immediate vicinity of a tall structure struck by lightning. The characterization of nearby electromagnetic fields is particularly important in the analysis of the interaction to nearby electrical and electronics systems. Why do lightning return stroke models not reproduce the far-field zero crossing associated with lightning to tall structures? How should these models be revised to be able to reproduce such an effect? How should the engineering models be revised in order to remove the associated current discontinuity at the return stroke wavefront? It is well-known that the measurements of electromagnetic fields from lightning are affected by the presence of nearby buildings and metallic structures. However, no systematic and quantitative analysis of such an effect is presently available in the literature. The work presented in this thesis addresses all of the above questions. The main original contributions of this thesis, consisting of both theoretical and experimental work, are presented in Chapters 3 through 6. Chapter 3 is devoted to a theoretical description of the signature of electric and magnetic fields at very close distance associated with lightning strikes to a tower. It is shown that the electric field generated by a lightning return stroke to a tall structure can change polarity at very close distance range. This change in the polarity seems to be a specific signature of the very close vertical electric field. A simple equation is derived which provides an estimate of the critical distance below which such an inversion of polarity might occur. It is also shown that the inversion of polarity depends on the value of the reflection coefficient at the base of the tower and disappears for reflection coefficients close to 1. On the other hand, other parameters such as the return stroke speed, the reflection coefficient at the top of the strike object, and the adopted return stroke model seem not to have an impact on the inversion of polarity. Simulation results also showed that the electric field peak at distances beyond the height of the tower or so exhibits the typical 1/r dependence. At closer distances, however, the E-field peak features a saturation, due to the so-called tower shadowing effect. This shadowing effect results in a substantial decrease of the nearby electric field. On the other hand, the magnetic field peak varies inversely proportional to the horizontal distance and does not depend significantly on the presence of an elevated strike object. Chapter 4 introduces an improved version of the engineering models for return-strokes to tall structures which accounts for (1) the presence of possible reflections at the return stroke wavefront, and, (2) a return stroke initiation above the structure due to an upward connecting leader. We also propose an elegant iterative solution that can be easily implemented into computer simulation programs to take into account in a straightforward way multiple reflections occurring at the discontinuities at the tower ends and at the return stroke wavefront. Simulation results for the magnetic fields are compared with experimental waveforms associated with lightning strikes to the CN Tower (553 m). It is shown that taking into account the reflections at the return-stroke wavefront results in better reproducing the fine structure of the magnetic field waveforms. Chapter 5 presents and discusses obtained measurements of electric (vertical and radial) and magnetic fields from leaders and return strokes associated with lightning strikes to the Gaisberg tower in Austria obtained in 2007 and 2008. The data include simultaneous records of vertical and radial electric fields, which were obtained for the first time at such close distances. It is found that the vertical and radial electric field waveforms appear as asymmetrical V-shaped pulses. For the vertical electric field, the initial, relatively slow, negative electric field change is due to the downward leader and the following fast positive field change is due to the upward return stroke phase of the lightning discharge. For the horizontal electric fields, however, the bottom of the V is not associated with the transition from the leader to the return stroke. The horizontal field change due to the return stroke is characterized by a short negative pulse of the order of one microsecond or so, starting with a fast negative excursion followed by a positive one. In addition, an analytical expression for the radial electric field, assuming a uniform charge distribution along the leader with constant speed is derived. It is also shown that the return-stroke vertical electric field changes appear to be significantly smaller than similar measurements obtained using triggered lightning. This finding confirms the shadowing effect of the tower predicted by the theoretical analysis of Chapter 3, which results in a significant decrease of the electric field at distances of about the height of the tower or less. Finally, the ability of two different models for the return stroke in reproducing measured vertical and horizontal electric fields is tested using the obtained measured data. The considered models are (1) the engineering MTLE (Modified Transmission Line with Exponential Decay) model, and (2) the electromagnetic model implemented using the Numerical Electromagnetics Code NEC-4. It is shown that both models predict electric field waveforms which are in reasonable agreement with measured waveforms. In general, the predicted fields by the electromagnetic model appear to be in better agreement with measured data, because of the direct use of the measured current waveform as an input and the more accurate representation of the tower. Chapter 6 reports on the effect of nearby buildings on electromagnetic fields from lightning. Indeed, sensors used for the measurement of lightning electric and magnetic fields are often placed close to or on top of buildings or other structures. Metallic beams and other conducting parts in those structures may cause enhancement or attenuation effects on the measured fields. Experimental waveforms radiated from distant natural lightning recorded during the summers of 2006 and 2007 are presented. Electric and magnetic field waveforms were measured simultaneously on the roof of a building and on the ground at different distances away from it. The results suggest that the measured electric field on the roof of the building could be enhanced by a factor of 1.7 to 1.9, whereas the electric fields on the ground experienced a significant reduction by a factor ranging from 5 to 20. Also, it is shown that for a sensor located on the ground close to a building, the magnetic field component perpendicular to the building can experience significant attenuation, presumably due to the effect of the induced currents in the building. The magnetic field on the roof of the building seems not to be significantly affected by the building. Simulations using the Numerical Electromagnetic Code (NEC-4) were also carried out in which the building was represented using a simple wire-grid model. The simulation results support in essence the findings of the experimental analysis, despite quantitative differences which are ascribed, at least in part, to the oversimplified model of the building.

EPFL2011

Graphene Field Effect Devices and Circuits

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars, coffee machines, even entire buildings. Without necessarily being aware of it, every person in our modern world is the owner of billions, probably tens of billions of transistors. These elementary switches are the primitive units, of which all electronic devices are made, much like biological cells constitute our bodies. Decades of technological progress at an incredible pace have been fueled by the constant improvement of semiconductor device technology. The original combination of silicon, silicon dioxide and aluminum required to build a transistor, has been complemented by a myriad of other materials. One of the last remainders of the original technology, the silicon channel, is now about to be replaced as well. While a short term remedy for the next performance bottleneck might be found in III-V compounds a more compelling alternative could be found in 2D materials. Graphene was not only the first 2D material to be discovered and isolated in 2004, but also has the most extraordinary electric properties, owing to the high symmetry of its lattice. The content of this thesis presents a broad examination of the graphene field effect device reaching from the fabrication over electrical characterization to data analysis, device modeling and finally simulation of a small circuit. In this thesis, we present practical considerations regarding the experimental examination of graphene field-effect devices. A fabrication flow tailored for top-gated graphene devices was developed, taking into account the particular requirements and sensitivities of the material. We also describe a set of versatile software tools that were developed for the design of devices, chips and wafers, their automated electric characterization and finally for browsing and visualizing the measurement results. The data analysis was performed with a very effective conductance-based model, which is based on semi-empirical models commonly used to describe graphene devices. We provide an overview of these models, the phenomena which they take into account and the steps that can be taken to improve their accuracy to obtain the model we finally utilized. A environment was created to use our model in a \textsc{Spice}-like circuit simulator in order to study possible topologies in which graphene devices could constitute an elementary circuit block. We focus our study on devices that operate as a differential pair, resembling the configuration that also enables very high-speed source-coupled and emitter-coupled logic circuits based on standard silicon transistors. Using analytical calculations we determine tuning parameters and their optimum values to maximize the transfer characteristics of our graphene-based differential circuit block. In order to achieve more accurate simulation and as a means to verify the empirical model, we worked on a more rigorous approach. Based on first principles, we construct a model building on the specific carrier statistics in graphene. These deviate from the usual Boltzmann statistics and lead to a an equation describing the device's charge-voltage relation, which is transcendental and cannot ordinarily be solved. By using asymptotic approximations, we obtain closed-form expressions for the device current as a function of bias conditions. Unlike many other models, we can discriminate both between electron and hole currents as well as between drift and diffusion currents, making the model well-suited for implementation as a compact model.

EPFL2016

Nano-electromechanical systems based on ultra-thin semiconductors

Sajedeh Manzeli

Nowadays, the interest in 2D materials has gone far beyond graphene. Specially, monolayers of transition metal dichalcogenides (TMDs) offer a broad spectrum of electronic and optical properties, and show the potential to revolutionize the electronics industry. The promising electronic properties of 2D semiconductors combined with their mechanical strength and flexibility, makes them ideal candidates for nanoelectromechanical systems (NEMS). This thesis focuses on realizing NEMS based on graphene and MoS2, which is one of the most appealing TMDs. First, we present the realization of graphene NEMS by fabricating single and bilayer graphene transistors featuring a doubly clamped suspended channel. The electromechanical response of monolayer graphene nanoribbons show a strain-induced increase in their electrical resistance, making it possible to estimate an upper limit for the piezoresistive gauge factor. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. Our numerical simulations indicate that these oscillations arise from quantum mechanical interference in the transition region induced by sliding of the two graphene layers with respect to each other. Our results report on the rare observation of room temperature electronic interference in bilayer graphene. Next, we investigate the static electromechanical response of atomically thin MoS2. MoS2 exhibits high youngâs modulus and fracture strength. Furthermore, the bandgap of MoS2 is highly strain-tunable. This coupling between electrical and mechanical properties makes MoS2 a promising material for NEMS. Here we incorporate monolayer, bilayer and trilayer MoS2 in a suspended membrane configuration with the electrodes acting as mechanical clamps. Strain-induced bandgap tuning is detected via electrical conductivity measurements and the emergence of the piezoresistive effect in MoS2 is demonstrated. We observe a reversible bandgap modulation in atomically thin MoS2 membranes with a thickness dependent modulation rate. Finite element method (FEM) simulations are used to obtain the spatially varying bandgap profile on the membrane and to quantify the rate of bandgap change. The piezoresistive gauge factor is calculated for single layer, bilayer and trilayer MoS2. Our results reveal that monolayer and bilayer MoS2 show a piezoresistive effect which is comparable to the state-of-the-art silicon strain sensors and two orders of magnitude higher than in graphene. Finally, we present the investigation of MoS2 NEMS resonators working in the VHF range and featuring piezoresistive transduction. The atomic thickness of monolayer MoS2 places it as a promising candidate for miniaturization of electromechanical devices to the limits of vertical scaling. While the small mass of MoS2 leads to an increased resonant frequency and a higher mass sensitivity, the presence of piezoresistivity offers a transduction mechanism in addition to the traditional capacitive transduction. Operating in the tension-dominated regime, monolayer MoS2 NEMS resonators not only allow tunability of the resonant frequency using an external voltage, but also show the strain-induced enhancement of their dynamic range. Furthermore, the resonators are driven into the nonlinear regime allowing the study of nonlinear effects. This work sheds light on the potential of TMD based NEMS as ultra-low power switches, sensors and resonators for applications in RF range.

EPFL2018