Publication
AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates
Publications associées (43)
Physics and applications of intersubband transitions in nitride based heterostructures
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
EPFL2008Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey
A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...
2008Charge trapping effects in photovoltage measurements of (Ga,Mn)As
Jean-Philippe Ansermet, Simon Granville
We report charge trapping effects in a ferromagnetic (Ga,Mn)As thin film observed during measurements of the photovoltage under inhomogeneous illumination conditions. Using a laser diode as the excitation source, the temperature-dependent response has been ...
2008Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Mauro Mosca, Dobri Simeonov, Tiankai Zhu
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...
2007Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
EPFL2007Narrow UV emission from homogeneous GaN/AlGaN quantum wells
Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Dobri Simeonov
The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and a ...
2007Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions
Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca
Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...
2007Lattice-matched AlInN alloys for nitride-based optoelectronic devices
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
EPFL2006Mechanically tunable optofluidic distributed feedback dye laser
A continuously tunable optofluidic distributed feedback (DFB) dye laser was demonstrated on a monolithic replica molded poly(dimethylsiloxane) (PDMS) chip. The optical feedback was provided by a phase-shifted higher order Bragg grating embedded in the liqu ...
2006Liquid-phase epitaxy of doped KY(WO4)2 layers for waveguide lasers
Rare-earth-ion doped KY(WO4)2 (hereafter KYW:RE) is a promising material for novel solid-state lasers. Its low laser threshold, high laser efficiency, and third-order nonlinear effects have stimulated research towards miniaturized thin-film waveguide laser ...
EPFL2005