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AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Publications associées (43)

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Physics and applications of intersubband transitions in nitride based heterostructures

Sylvain Nicolay

In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...

EPFL2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Charge trapping effects in photovoltage measurements of (Ga,Mn)As

Jean-Philippe Ansermet, Simon Granville

We report charge trapping effects in a ferromagnetic (Ga,Mn)As thin film observed during measurements of the photovoltage under inhomogeneous illumination conditions. Using a laser diode as the excitation source, the temperature-dependent response has been ...

2008

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The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering ga ...

2007

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...

EPFL2007

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The authors report on the achievement of narrow ultraviolet emission using GaN/AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and a ...

2007

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...

2007

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006

Mechanically tunable optofluidic distributed feedback dye laser

Demetri Psaltis

A continuously tunable optofluidic distributed feedback (DFB) dye laser was demonstrated on a monolithic replica molded poly(dimethylsiloxane) (PDMS) chip. The optical feedback was provided by a phase-shifted higher order Bragg grating embedded in the liqu ...

2006

Liquid-phase epitaxy of doped KY(WO4)2 layers for waveguide lasers

Rare-earth-ion doped KY(WO4)2 (hereafter KYW:RE) is a promising material for novel solid-state lasers. Its low laser threshold, high laser efficiency, and third-order nonlinear effects have stimulated research towards miniaturized thin-film waveguide laser ...

EPFL2005