Publication
Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very thin films, which is mainly controlled by the screening ability of the ferroelectric-semiconductor interface. We show here that the difference in ferroelectric-semiconductor work function can strongly influence the screening ability of the interface. The work function difference can be controlled by choosing the materials carefully.
Mihai Adrian Ionescu, Ali Saeidi, Arnab Biswas