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The structure of the Si(100)-SiO2 interface is investigated at the atomic scale by combining Rutherford ion scattering measurements and theoretical modeling. Ion-scattering experiments are performed in the channeling geometry using ion energies between 0.4 ...
EDF projette d'intégrer le concept de plasticité des interfaces dans sa pratique de conception centrée sur l'activité des utilisateurs. La spécification abstraite de l'interface d'un service grand public et la constitution d'un guide de style spécifique à ...
We construct atomistic models of the Si(100)-SiO2 interface in accord with available experimental data. Combining classical and first-principles simulation methods, we generate transition structures from crystalline silicon to disordered SiO2. The generati ...
This contribution introduces the basic techniques for digital facial engraving, which imitates traditional copperplate engraving. Inspired by traditional techniques, we first establish a set of basic rules thanks to which separate engraving layers are buil ...
It is shown that the unusual scattering of the currently reported photoluminescence energy of GaInP/GaAs quantum wells (QWs) can be well accounted for by considering the combined effect of In surface segregation and As/P exchange at the interfaces. The res ...
We investigated the oxidation reaction of the O-2 molecule at the Si(100)-SiO2 interface by using a constrained ab initio molecular dynamics approach. To represent the Si(100)-SiO2 interface, we adopted several model interfaces whose structural properties ...
One crucial task for e-commerce systems is to help buyers find products that not only satisfy their preferences but also reduce their search effort. Usually the amount of available products is far beyond the upper limit that any individual could process by ...
Association for Computing Machinery, New York, NY 10036-5701, United States2005
A model interface between Si and disordered SiO2 is obtained which incorporates the interface bonding pattern previously generated by first-principles molecular dynamics. The model is then characterized by comparing its properties with experimental data wh ...
We review the structural, electronic and dielectric properties of atomistic models of the Si(100)-SiO2 interface, which have been purposely designed in order to match a large variety of atomic-scale experimental data. After describing the generation proced ...
Recent developments in transmission and switching technology has made available low-cost gigabit network capacity forpacket-based WANs (e.g., IP over WDM), that will not require the intermediate SONET/SDH multiplexing layer. For competitive operators that ...