Publication
Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc.
Publications associées (32)
Photosensitivity and stress changes of Ge-free Bi-Al doped silica optical fibers under ArF excimer laser irradiation
Hans Georg Limberger, Christian Ban
The photosensitivity of germanium free Bi-Al-doped silica fibers with different bismuth concentrations was investigated using ArF excimer laser radiation at 193 nm and fiber grating formation. For the fiber with the highest bismuth concentration maximum re ...
Optical Society of America2011ArF laser induced refractive index and luminescence changes in Bi-doped aluminosilicate fibers - INVITED
Hans Georg Limberger, Christian Ban
Fibers doped with bismuth show broad luminescence bands around 750, 1100, and 1400 nm with spectral bandwidths of 100 to 200 nm at room temperature. The luminescence bands can be observed by pumping broad absorption bands in the visible or near infrared sp ...
2010Intrinsic Emittance Reduction of an Electron Beam from Metal Photocathodes
Electron beams in modern linear accelerators are now becoming limited in brightness by the intrinsic emittance of the photocathode electron source. Therefore it becomes important for large scale facilities such as free electron lasers to reduce this fundam ...
2010