Comparison of lead zirconate titanate (PZT) thin films for MEMS energy harvester with interdigitated and parallel plate electrodes

Nachiappan Chidambaram, Andrea Mazzalai, Paul Muralt
Ieee, 2012
Article de conférence

Résumé

PZT thin films on insulator buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures, because IDE structures exploit the longitudinal piezoelectric effect, which is about twice as high as the transverse piezoelectric effect exploited with PPE structures. There are only few studies on PZT IDE structures and their piezoelectric properties, and even no studies with a direct experimental comparison of the two options. The biggest challenge in using PZT with IDE structures are texture control on insulating buffer layers, and efficient poling at higher electrode gaps. Still, IDE structures are better suited for energy harvesting application as they can generate higher voltages with the same strain. We have proposed a figure of merit (FOM) for easy comparison with similar parallel plate electrode (PPE) structures. Our FOM corresponds to twice the energy density stored per unit strain deformation. For 1 mu m random PZT on titania buffered silicon, a FOM of 1.26 x 10(10) J/m(3) and 12.9 mV/mu strain was achieved when compared to 1.03 x 10(10) J/m(3) and 1.14 mV/mu strain for highly oriented, well poled 1 mu m PZT with PPE system.

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Comparison of Lead Zirconate Titanate Thin Films for Microelectromechanical Energy Harvester With Interdigitated and Parallel Plate Electrodes

Davide Balma, Nachiappan Chidambaram, Andrea Mazzalai, Paul Muralt

Lead zirconate titanate (PZT) thin films on insulator-buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures because the former exploit the longitudinal piezoelectric effect, which is about twice as high as the transverse piezoelectric effect used by PPE structures. In this work, both options are compared with respect to dielectric, ferroelectric, and piezoelectric properties, leakage currents, and figure of merit (FOM) for energy harvesting. The test samples were silicon beams with {100} PZT thin films in the case of the PPE geometry, and random PZT thin films for the IDE geometry. Both films were obtained by an identical sol-gel route. Almost the same dielectric constants were derived when the conformal mapping method was applied for the IDE capacitor to correct for the IDE geometry. The dielectric loss was smaller in the IDE case. The ferroelectric loops showed a higher saturation polarization, a higher coercive field, and less back-switching for the IDE case. The leakage current density of the IDE structure was measured to be about 4 orders of magnitude lower than that of the PPE structure. The best FOM of the IDE structures was 20% superior to that of the PPE structures while also having a voltage response that was ten times higher (12.9 mV/mu strain).

Ieee-Inst Electrical Electronics Engineers Inc2013

Chargement

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Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, and second, the application of an electric field leads to a compressive stress component in addition to the overall stress state, unlike a PPE structure, which results in tensile stress component. Because ceramics tend to crack at relatively moderate tensile stresses, this means that IDEs have a lower risk of cracking than PPEs. For these reasons, IDE systems are ideal for energy harvesting of vibration energy, and for actuators. Systematic investigations of PZT films with IDE systems have not yet been undertaken. In this work, we present results on the evaluation of the in-plane piezoelectric coefficients with IDE systems. Additionally, we also propose a simple and measurable figure of merit (FOM) to analyze and evaluate the relevant piezoelectric parameter for harvesting efficiency without the need to fabricate the energy harvesting device. Idealized effective coefficients e(IDE) and h(IDE) are derived, showing its composite nature with about one-third contribution of the transverse effect, and about two-thirds contribution of the longitudinal effect in the case of a PZT film deposited on a (100)-oriented silicon wafer with the in-plane electric field along one of the < 011 > Si directions. Randomly oriented 1-mu m-thick PZT 53/47 film deposited by a sol-gel technique, was evaluated and yielded an effective coefficient e(IDE) of 15 C.m(-2). Our FOM is the product between effective e and h coefficient representing twice the electrical energy density stored in the piezoelectric film per unit strain deformation (both for IDE and PPE systems). Assuming homogeneous fields between the fingers, and neglecting the contribution from below the electrode fingers, the FOM for IDE structures with larger electrode gap is derived to be twice as large as for PPE structures, for PZT-5H properties. The experiments yielded an FOM of the IDE structures of 1.25 x 10(10) J/m(3) and 14 mV/mu strain.

Institute of Electrical and Electronics Engineers2012

Chargement

Internal electric fields and electrode effects in ferroelectric thin films for piezoelectric energy harvesting

Robin Nigon

The continuing decrease of power requirements of electronic circuits offers the potential to deploy wireless systems as embedded sensors for cars or industrial tools, and implanted medical devices. Harvesting ambient vibrations by an appropriate energy harvesting (EH) device allows to avoid an undesirable battery replacement. At the scale of micro-electromechanical systems, where severe size constraints must be met, microfabricated EH devices with piezoelectric thin films offer the best energy density. Ferroelectric lead zirconate titanate (PZT) thin films with interdigitated electrodes (IDE) appear as the most promising device design for this purpose. Accurate characterization of the thin film response is necessary to determine the PZT composition and doping, the electrode geometry, and the stack design for maximum EH efficiency. Unfortunately, there is no rigorous description of the physical behavior of the IDE system to date. One goal of this thesis was thus to provide a better understanding of the experimental observations made by previous researchers. In addition, only a limited PZT composition and doping range has been investigated in this configuration. It was the second goal of this thesis to widen this range in order to determine the combination that yields the best EH efficiency. Finally, the risk of partial or total depoling over the device lifetime is always present in ferroelectric materials. The phenomena of aging and self-poling are of great interest to ensure proper retention of the poled state and, thus, the reliability of the harvesting device. Neither of the two are well understood. It was the third goal of this thesis to investigate the aging behavior and methods to promote self-poling. In this thesis work, we have have proposed a description of the physical behavior of the IDE system, and we have developed an analytical model for extracting the effective material properties from standard characterization measurements, which is well supported by both finite element (FE) simulations and experimental data. We found that if the substrate is conductive enough, a parasitic capacitance is present in parallel to the material response. We have provided a method to subtract the contribution of the parasitic capacitance, which has an accuracy of better than 4% in a wide range of IDE geometries as determined by FE simulations. We have investigated the performances of doped PZT thin films with IDE for several combinations of dopant and composition. We have improved an existing fabrication route to obtain textured PZT films on an insulating MgO layer. We found that dopants systematically reduced the piezoelectric response and retention capability, and increased the dielectric constant. All three are detrimental for EH. Undoped compositions should be chosen. We have studied methods to improve the stability of the poled state through aging and self-poling. Introducing the latter into the IDE configuration did not provide sufficiently strong effects to be of practical interest. On the contrary, the aging process may allow to tune the extrinsic contributions to the dielectric and piezoelectric response. It is likely caused by polarization discontinuities at grain boundaries. Further work is needed for fully optimizing this phenomenon. Finally, from the previous investigations, we could deduce and propose golden rules for the design of IDE structures, and discuss typical applications where they are advantageous.

EPFL2017

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Institute of Electrical and Electronics Engineers2012

Internal electric fields and electrode effects in ferroelectric thin films for piezoelectric energy harvesting

Robin Nigon

EPFL2017