Surface structure of nickel oxide layers on a Rh(111) surface
Publications associées (73)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Aluminum oxidation states in stoichiometric or substoichiometric configuration are studied by core level photoemission spectroscopy on different substrates (SiO2, graphite). They are compared with recent results reported for the interface Si-Al-n+O. Three ...
We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0 less than or equal to E(b) less than or equal ...
Ballistic emission electron and X-ray photoelectron emission microscopy studies are presented for the sulfur-passivated Pt-GaP(001) buried metal-semiconductor interface. The topographic/ballistic images showed that the roughness of the metal-semiconductor ...
Lead zirconium titanium oxide (PZT) thin films are used for their ferroelectric and piezoelectric properties. The composition of the PZT is very important for these properties, and may also be influenced by inter- diffusion with the bottom electrode, on wh ...
Al-Sn layer structures were prepared by simultaneous evaporation of Al and Sn onto predeposited Al layers prepared on SiO2-covered Si wafer substrates, at a substrate temperature of 470 K and an oxygen partial pressure of 3 X 10(-3) Pa. The chemical state, ...
In order to investigate the formation and the time evolution of Na oxidation states, a thin ayer 0 sodium was deposited on oxidized substrates and exposed to oxygen at 10(-9) Torr. In the Na 2p core-level spectrum, several chemically shifted components hav ...
Electron cyclotron resonance plasma-assisted molecular-beam epitaxy has been used to grow hexagonal and cubic GaN crystal layers on Si(100). By a combined application of in-situ reflection high-energy electron diffraction, X-ray photoelectron spectroscopy ...
In the frame of the RD26 collaboration at CERN we have built and tested several prototypes of fast-RICH detectors suitable for the construction of large systems. The detectors used a solid photocathode consisting of a 500 nm CsI layer evaporated on a conve ...
We report the formation of silicon oxide thin films obtained at room temperature by Ar+ bombardment of Si(100) wafers in partial oxygen atmosphere, The ion bombardment was done in the energy range E(b) - 100-1000 eV, with Ar partial pressure P-Ar = 1 x 10( ...
We demonstrated that polycrystalline cesium iodide (CsI) on large area Ni/Au coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard Cu/Au printed circuits. This is the most important result ...