Domain and lattice contributions to dielectric and piezoelectric properties of PZT thin films as a function of composition
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
In the present study, piezoelectric, conductivity and dielectric measurements have been performed on virgin and fatigued ferroelectric PZT thin films prepared by spin-on sol-gel deposition process on Si/SiO2/Ti/Pt substrates. By fatiguing, the polarisation ...
The microstructure and preferred orientations of rapid thermally annealed Pb(Zr0.53, Ti0.47)O3 films, deposited on Pt/Ti/SiO2/Si electrode/substrates by solution-gel spinning, have been investigated using analytical and high-resolution electron microscopy ...
PbZrxT1-x O3 (PZT) films on silicon substrates can be used for various micro mechanical devices. An insitu reactive sputter deposition process at 600°C has been developed for this application. Three magnetron sources with metal targets have been applied si ...
The piezoelectric properties of lead zirconate titanate (PZT) thin films deposited on thick silicon substrates and thin silicon membranes were investigated using optical interferometry. The effect of the geometrical constraints and clamping effects on the p ...
Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O-3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectri ...
Pb(Zr1–xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. Fo ...
