Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures
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Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advant ...
We present a microscopic theoretical analysis of time and spatially resolved photoluminescence of naturally occurring quantum dots induced by monolayer fluctuations in the thickness of semiconductor quantum wells. The analysis is based on a recently develo ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
Control on the degree of valence band mixing is experimentally achieved in the particular GaAs/AlGaAs quantum Dot-in-Dot (DiD) structure. The effect is reflected by the tunable polarization of the emitted photons. ...
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Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...
Semiconductor quantum wires (QWRs) and quantum dots (QDs) represent important classes of low-dimensional quantum nanostructures, useful for studies and applications of quasi one- and zero-dimensional systems. Recently, considerable efforts have been devote ...
Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO2 layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO2 p ...
The occurrence of heterostructures of cubic silicon/hexagonal silicon as disks defined along the nanowire < 111 > growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst. Detailed measurements on the structural properties of b ...
In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW ...
A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic ...