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Another transistor-based revolution: on-chip qPCR

Publications associées (34)

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Ultra Low Voltage Synthesizable Memories: A Trade-Off Discussion in 65 nm CMOS

Andreas Peter Burg, Pascal Andreas Meinerzhagen, Oskar Andersson

In this study, design considerations for ultra low voltage (ULV) standard-cell based memories (SCM) are presented. Trade-offs for area cost, leakage power, access time, and access energy are discussed and realized using different read logic styles, latch a ...

Institute of Electrical and Electronics Engineers2016

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Arnab Biswas, Nilay Dagtekin

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

Simulation, Analysis, and Verification of Substrate Currents for Layout Optimization of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

Today circuit failures in Smart Power ICs due to substrate couplings are partially addressed during the circuit design phase. The state-of-the-art guidelines for the optimization of parasitic couplings provide mainly qualitative rules, which are difficult ...

Institute of Electrical and Electronics Engineers2016

Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditio ...

Springer Verlag2016

Cmos image sensor

Assim Boukhayma, Arnaud Peizerat

A CMOS image sensor including a pixel including: a photodiode in series with a MOS transistor between a first reference potential and a sense node; a MOS transistor connecting the sense node to a second reference potential; and a third MOS transistor assem ...

2016

Layout Technique for Double-Gate Silicon Nanowire FETs With an Efficient Sea-of-Tiles Architecture

Giovanni De Micheli, Shashi Kanth Bobba

As we advance into the era of nanotechnology, semiconductor devices are scaled down to their physical limits, thereby opening up venues for new transistor channel materials based on nanowires and nanotubes. Transistors based on nanowires and nanotubes inhe ...

Ieee-Inst Electrical Electronics Engineers Inc2015

Practical Applications of Tunnel Field Effect Transistors

Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...

EPFL2015

Mono- and Bilayer WS2 Light-Emitting Transistors

Helmuth Berger

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices ...

Amer Chemical Soc2014

Inkjet-printed organic transistors for the detection of gaseous analytes

Nico de Rooij, Danick Briand, Francisco Molina Lopez, Giorgio Mattana

This work presents the fabrication and characterization of inkjet-printed Organic Field Effect Transistors (OFETs) fabricated on flexible, plastic substrates for the detection of gaseous species. The transistors structure and fabrication process is present ...

2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013