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Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire-based radial GaAs p-i-n junction. Current-voltage characteristics are shown, along with scanning photocurrent mapping.
Stefanos Giannakis, Jérémie Decker
Shaik Mohammed Zakeeruddin, Ursula Röthlisberger, Sandy Sanchez Alonso, Narges Yaghoobi Nia, Ulf Anders Hagfeldt, Hong Zhang, Dan Ren, Linfeng Pan, Paramvir Ahlawat, Masaud Hassan S Almalki, Viacheslav Bolnykh, Anurag Krishna, Tzu-Sen Su