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Silicon nanowires reliability and robustness investigation using AFM-based techniques

Publications associées (37)

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Junctionless Silicon Nanowire Resonator

Mihai Adrian Ionescu, Sebastian Thimotee Bartsch, Maren Arp

The development of nanoelectromechanical systems (NEMS) is likely to open up a broad spectrum of applications in science and technology. In this study, we demonstrate a novel double-transduction principle for silicon nanowire resonators which exploits the ...

2014

Memristive sensors for pH measure in dry conditions

Giovanni De Micheli, Sandro Carrara, Francesca Puppo, Massimiliano Di Ventra

A large progress in pH sensing with nanowire based ion-sensitive field-effect transistors (ISFETs) has been demonstrated over the years. The electrochemical reactions occurring at the wire surface-to-electrolyte interface play a key role in the detection o ...

Elsevier Science Bv2014

High Sensitive Detection in Tumor Extracts with SiNW-FET in-Air Biosensors

Giovanni De Micheli, Sandro Carrara, Francesca Puppo

We have already demonstrated that high quality SiNW-FETs can be used to sense very low concentration range (fM) of pathogenic factors in controlled PBS. In this work we show, for the first time, Silicon Nanowire Field Effect Transistors (SiNW-FET) as biose ...

IEEE2014

Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

Nanoengineered Silicon: Technology and Applications

Sandro Carrara, Lucia Baldi Unser

Silicon has been, and continues to be, the material support of integrated circuit (IC) technology-the enabling tool of one of the most impressive technological, industrial and social revolution of mankind. Silicon (both in monocrystalline and polycrystalli ...

2011

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz, Frederik Sebastian Ante

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer t ...

2011

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011