Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G(0)W(0)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The approximative single-band effective mass model for calculating the electronic structure and optical properties of flat quantum dots was introduced. The comparison with more accurate model has shown the applicability of the approximations. The method ha ...
We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increa ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...
We study the charge state of the diffusing O-2 molecule during silicon oxidation through hybrid functional calculations. We calculate charge-transition levels of O-2 in bulk SiO2 and use theoretical band offsets to align these levels with respect to the Si ...
We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from similar to 4 to 25 Angstrom. We observed a nonmonotonic relatio ...
The photoluminescence (PL) and PL-excitation (PLE) spectra of InyCa1-yAs/AlxGa1-xAs compressively strained V-groove quantum wires (QWR's) are compared to that of lattice-matched GaAs/AlyGa1-xAs QWR's with the same wire geometry. The PL is preferentially po ...
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
We report x-ray photoelectron spectroscopy experimental results on band offsets at Ge/Si(100)2 x 1 interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at 400 degrees C in Si(100)2 x 1, the valence band discontinuity was of 0.7 ...
Through the sequential use of classical molecular dynamics and first-principles relaxation methods, we generate an abrupt model interface for the 4H(0001)SiC-SiO2 interface showing regular structural parameters without any coordination defect. The valence ...