c-texture versus a-texture low pressure metalorganic chemical vapor deposition ZnO films: Lower resistivity despite smaller grain size
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Increasing the conductivity of polycrystalline zinc oxide films without impacting the transparency is a key aspect in the race to find affordable and high quality material as replacement of indium-containing oxides. Usually, ZnO film conductivity is provid ...
In this contribution, we study the increase in metalorganic-low pressure chemical vapor deposited (MO-LPCVD) ZnO thin films conductivity by hydrogen plasma post-treatment. We show that this improvement is linked to defect passivation at grain boundaries, d ...
The study of texture in thin films is one of the possibilities to obtain information on the fundamental physical processes which govern the thin film growth. Near the substrate, the crystalline orientation of the coating layer will usually be influenced by ...
Conductive zinc oxide (ZnO) grown by low pressure chemical vapor deposition (LPCVD) technique possesses a rough surface that induces an efficient light scattering in thin film silicon (TF Si) solar cells, which makes this TCO an ideal candidate for contact ...
This work presents analyses and developments in nanofabrication using stencil lithography and its application for electronics and biosensing. Metallic nanostructures are fabricated using stencil lithography studying the pattern transfer from the stencil to ...
everal SrTiO3 (STO) thin films without electrodes processed by pulsed laser deposition, of thicknesses down to 40 nm, were studied using infrared transmission and reflection spectroscopy. The complex dielectric responses of polar phonon modes, particularly ...
Pure and barium titanate (BT) powders doped with different lanthanum concentration were prepared by the polymeric precursor method (Pechini process) which was carried out as a three-stage process from organometallic complexes. Sintering of pressed powders ...
The electrical and optical properties of TaxSiyNz thin films deposited by reactive magnetron sputtering from individual Ta and Si targets were studied in order to investigate the effects of nitrogen and silicon contents on both properties and their correla ...
Since the end of the last century, Cu damascene integration scheme has been the favoured choice for advanced interconnect technologies. Indeed, due to the lowest Cu bulk resistivity and to it higher resistance to electromigration, performances enhancement ...
e report an investigation concerning the influence of ion bombardment on the nanostructure and physical properties of Zr–Si–N nanocomposite thin films. The films were deposited by reactive magnetron sputtering from individual Zr and Si targets. The Si cont ...