Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN
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Laser chem. vapor deposition (LCVD) of Pt from Pt bishexafluoroacetylacetonate was studied. The elec. cond. of the metallic deposit was investigated as a function of the writing speed, the vapor pressure of the organometallic compd., and the laser power at ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
An argon laser is used to induce Laser Chem. Vapor Deposition (LCVD) of platinum using platinum bihexafluoroacetylacetonate as precursor. The process can be photolytic or pyrolytic depending on the laser power used. These processes are studied by recording ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
Photoelectron-spectromicroscopy experiments unexpectedly revealed a reacted phase for Ge overlayers on GaSe. This finding is in sharp contrast with the notion that this interface is an ideal Schottky system, whose band discontinuities, for example, are det ...
A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pre ...
