Bi2Te3-xSex series studied by resistivity and thermopower
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Band-structure (BS) calculations of the density of states (DOS) using the full potential augmented plane waves code WIEN97 were performed on the four single-valence vanadium oxides VO, V2O3, VO2 and V2O5. The DOS are discussed with respect to the distortio ...
We present a photoemission spectroscopy study of As-rich n-GaAs(001) surface modified by the deposition of an undoped silicon overlayer with thickness quite narrowly covering the interval from similar to 4 to 25 Angstrom. We observed a nonmonotonic relatio ...
We analyze the electronic properties of quantum wires with a Z-like profile within four-band models for the valence band of a semiconductor of diamond and zinc blende type. Group-theoretical considerations show that the valence-band structure is doubly deg ...
Selective photoluminescence experiments have been used to analyse the neutral donor bound exciton spectra in n type wurtzite GaN epitaxial layers deposited on 6H-SiC, Al2O3 and GaN substrates, In heterostructure layers, the existence of residual strain dis ...
We report on carrier-induced effects on emission and absorption in forward biased GaAs/AlGaAs V-groove quantum wire (QWR) diodes observed using low-temperature (10 K) photoluminescence (PL), electroluminescence (EL) and PL excitation (PLE) spectroscopy. In ...
We exploited angle-resolved photoelectron spectroscopy (ARPES) with high energy resolution to map the band structure of the typical one-dimensional organic conductor TTF-TCNQ. We directly observe dispersing spectral features corresponding to the donor (TTF ...
An optoelectric radiation detector detecting short wave electromagnetic radiation, characterized by a charge transfer layer containing a hole conduction material. ...
We present a method for obtaining well-localized Wannier-like functions (WF's) for energy bands that are attached to or mixed with other bands. The present scheme removes the limitation of the usual maximally localized WF's method [N. Marzari and D. Vander ...
We performed a spectromicroscopy experiment to find evidence of lateral inhomogeneities in the band bending for the Al/GaS system. Microimages of the interface tuned on the Al 2p con levels revealed localized chemical inhomogeneities in proximity of the ed ...
The optical properties of high-quality V-groove GaAs/AlxGa1-xAs quantum wires have been investigated using low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques. We systematically study the evolution of PL and PLE spectra ...
