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The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
Using a differential transmission pump-probe experiment in heterodyne detection, the ultrafast gain and refractive-index dynamics of the ground-state transition in InAs/GaAs quantum-dot amplifiers emitting near 1.3 mu m at working condition, that is at roo ...
The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, an ...
Germanium metal-insulator-semiconductor capacitors with La2O3 dielectrics deposited at high temperature or subjected to post deposition annealing show good electrical characteristics, especially low density of interface states D-it in the 10(11) eV(-1) cm( ...
A completely scalable lumped-circuit model for horizontal HALL devices is presented therein that can be efficiently implemented in SPICE-like EDA simulators. The model has been employed for the quantitative analysis of: (a) geometrical, (b) temperature, an ...
Five core-cyanated perylene carboxylic diimides end-functionalized with fluorine-containing linear and cyclic substituents have been synthesized and employed in the fabrication of air-stable n-channel organic thin-film field-effect transistors with carrier ...
The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure ...
The goal of this thesis is to contribute to the understanding of charge transport in organic field-effect transistors (OFETs) made of pentacene. Organic thin-film transistors (OTFTs) with active layers thicknesses of 5, 10, 20, and 100 nm were fabricated i ...
The paper reports on the effects of Gamma radiation to single-photon avalanche diodes (SPADs). To the best of our knowledge, this is the first study ever conducted on SPADs fabricated in CMOS technology. A typical CMOS SPAD consists of a pn junction revers ...
Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...