Lead chalcogenide (IV-VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed to realize two mid-infrared optoelectronic devices for the first time. A tunable resonant cavity enhanced detector is realized by employing a movable mirror. Tuning is across the 4 μm to 5.5 μm wavelength range, and linewidth is
Camille Sophie Brès, Davide Grassani, Eirini Tagkoudi
Berend Smit, Luc Patiny, Kevin Maik Jablonka