Reduction of the effects of InGaAs alloy disorder by using superlattices as the conduction channel in modulation-doped heterostructures
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A contacting scheme to measure the transport properties into self-assembled InAs Quantum Wires (QWRs) or Quantum Dots (QDs) is presented. The nanostructures are formed on the (110) cleaved edge of a AlAs/AlGaAs heterostructure substrate by means of the Cle ...
We studied the photo-Hall mobility and the photo-Hall density of modulation-doped field-effect transistor structures using either an InGaAs alloy channel or a short-period superlattice channel. In defining the short-period superlattice channel we changed t ...
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