Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?
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Deep centers in undoped n-GaN grown by Hydride Vapor Phase Epitaxy were characterized by Deep Level Transient Spectroscopy (DLTS), revealing four known levels with activation energies in the range 0.17-0.94 eV. Deeper levels in the bandgap were observed by ...
Photoresist-based lithography has major limitations when applied to micro-electro-mechanical systems (MEMS) with mechanically fragile and/or chemically functionalised surfaces. As a remedy, alternative, complementary nanopatterning methods have been develo ...
The low-frequency noise of lattice-matched InAlAs/InGaAs/InP high electron mobility transistors (HEMT's) gate recess etched with a highly selective dry etching process and with conventional wet etching were studied at different gate and drain biases for th ...
Institute of Electrical and Electronics Engineers1998
A new method to release MEMS chips from a wafer without dicing is presented. It can be applied whenever SOI wafers are used that are structured from both the device and the handle side using DRIE. This method enables the release of extremely fragile struct ...
We present an optical investigation of GaN pillars using both micro-Raman (mu-Raman) and microphotoluminescence (mu-PL) spectroscopy. GaN pillars of diameter ranging from 100 nm to 5 mum were fabricated by electron beam lithography and reactive ion etching ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
The endeavour to develop nanodevices demands for patterning methods in the nanometer scale. The continuous improvement in lithography methods based on deep UV (DUV), X-ray, or electron beam exposure allow for further progress in integrated circuit hardware ...
Photoresist-based lithography has major limitations if applied to MEMS with mechanically fragile and chemically functionalized surfaces. As remedy, new alternative and complementary nanopatterning methods have been developed, such as thermo-mechanical inde ...