Large-scale neural networks implemented with nonvolatile memory as the synaptic weight element: comparative performance analysis (accuracy, speed, and power)
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Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...
A memory capacitor with a multistacked tunnel layer of Al2O3/HfO2/SiO2 (AHO) has been fabricated together with HfO2 charge trapping layer and Al2O3 control oxide layer. The resulting capacitor exhibits a memory window as large as 7.6 V for +/- 12 V sweep v ...
The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of La ...
Sender-based message logging, a low-overhead mechanism for providing transparent fault-tolerance in distributed systems, is described. It differs from conventional message logging mechanisms in that each message is logged in volatile memory on the machine ...
A non-volatile random access memory (NVRAM) of the type with magnetoresistive memory elements (1) connected by sets of non-intersecting conductor sense lines (3, 4) which define the address of each memory element (1) and are connectable to a magnetic write ...
This paper describes the architecture of eNVy, a large non-volatile main memory storage system built primarily with Flash memory. eNVy presents its storage space as a linear, memory mapped array rather than as an emulated disk in order to provide an effici ...
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of ...
There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory device and technique of reading data from and writing data into memory cells of the memory device. In this regard, in one embodimen ...
Photoluminescence (PL) spectroscopy is demonstrated as a suitable technique to characterize silicon nanocrystals (Si-NCs)-based nonvolatile memory devices. The 2D array of Si-NCs forming the floating gate is obtained by low-energy ion implantation in thin ...
