Publications associées à Low-Temperature High-Mobility Amorphous IZO for Silicon Heterojunction Solar Cells

Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

Passivation, conductivity, and selectivity are often acknowledged as the three requirements for optimal contacts to photovoltaic solar cells. Although there are generally accepted definitions and metrics for passivation and conductivity, a common understan ...

2019

Paths for maximal light incoupling and excellent electrical performances in silicon heterojunction solar cells

Christophe Ballif, Bertrand Yves Paul Paviet-Salomon, Laurie-Lou Senaud, Matthieu Despeisse, Mathieu Gérard Boccard, Monica Morales Masis, Jan Haschke, Luca Massimiliano Antognini, Jean Cattin, Oscar Esteban Rucavado Leandro, Raphaël Monnard, Julie Amandine Dreon, Vincent Philippe Paratte, Olivier Denis Dupré, Angela Nicole Fioretti, Sihua Zhong

We discuss here optical losses in silicon heterojunction solar cells and strategies to minimize them. Optical losses originate from most non-crystalline-silicon layers involved in the solar cell. A breakdown for typical values is shown evidencing that supp ...

IEEE2019

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Mathieu Gérard Boccard, Monica Morales Masis, Oscar Esteban Rucavado Leandro, Federica Landucci

Zr-doped indium oxide (In2O3:Zr) has been shown to satisfy the requirements of low resistance, wide band gap, and high infrared transmittance for application as a front contact in broadband solar cells. However, the reduction of indium usage in front of tr ...

AMER PHYSICAL SOC2019

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Christophe Ballif, Raphaël François Lemerle, Mathieu Gérard Boccard, Jan Haschke, Brahim Aissa

In this paper, we report the evolution of silicon heterojunction solar cell properties focusing, in particular, on the indium tin oxide (ITO) layers upon consecutive thermal annealing. We find that the charge carrier density

N_{\rm e}

of the ITO increase ...

2019

Impact of the Oxygen Flow during the Magnetron Sputtering Deposition on the Indium Tin Oxide thin films for Silicon Heterojunction Solar Cell

Christophe Ballif, Mathieu Gérard Boccard, Jan Haschke, Jean Cattin, Brahim Aissa, Akshath Raghu Shetty

We report on the optoelectronic properties of ITO layers deposited by DC sputtering, using different oxygen to total flow ratios [r(O-2) = O-2/Ar, ranging from 1% to 8%], for silicon heterojunction (SHJ) solar cell application. The depth profiling of the v ...

IEEE2019

Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells

Christophe Ballif, Mathieu Gérard Boccard, Angela Nicole Fioretti, Tzu-Chin Chang Chien, Yashi Xiao

Carrier-selective, passivating contacts have allowed silicon heterojunction (SHJ) cells to reach recordbreaking efficiencies particularly in all-back-contacted designs. However, two-side-contacted SHJ cell efficiency has been limited due in part to parasit ...

2019

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Gizem Nogay

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

What Limits Mobility in Hydrogenated Indium Oxide?

Monica Morales Masis, Laura Ding, Michael Elias Stückelberger, Martial Duchamp, Fabien Paul Jacques Dauzou

Understanding the electron scattering mechanisms dominating transport in high and low mobility transparent conducting oxides can provide insight into improving the properties of this crucial photovoltaic device layer. Contributions from ionized impurity sc ...

IEEE2018

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Monica Morales Masis, Jakub Holovsky, Martial Duchamp, Oscar Esteban Rucavado Leandro, Federica Landucci

The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 °C in oxidizing, neutral, and reducing atmospheres before ch ...

American Physical Society2017

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Monica Morales Masis, Jakub Holovsky, Martial Duchamp, Oscar Esteban Rucavado Leandro, Federica Landucci

The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 degrees C in oxidizing, neutral, and reducing atmospheres be ...

Amer Physical Soc2017

Low-Temperature High-Mobility Amorphous IZO for Silicon Heterojunction Solar Cells

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Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

Paths for maximal light incoupling and excellent electrical performances in silicon heterojunction solar cells

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Impact of the Oxygen Flow during the Magnetron Sputtering Deposition on the Indium Tin Oxide thin films for Silicon Heterojunction Solar Cell

Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

What Limits Mobility in Hydrogenated Indium Oxide?

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

Zr-doped indium oxide electrodes: Annealing and thickness effects on microstructure and carrier transport

Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

Impact of the Oxygen Flow during the Magnetron Sputtering Deposition on the Indium Tin Oxide thin films for Silicon Heterojunction Solar Cell

Gallium Nitride as Transparent Electron-Selective Contact in Silicon Heterojunction Solar Cells

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

What Limits Mobility in Hydrogenated Indium Oxide?

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Paths for maximal light incoupling and excellent electrical performances in silicon heterojunction solar cells