Publication

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Publications associées (37)

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The study of polarization reversal in (Pb,La)(Zr,Ti)O-3 thin films reveals a drastic difference between the switching kinetics observed at RT and at low temperature of 40 K. In particular, at 40 K, the switching kinetics in studied films is similar to that ...

2003

Properties of chemical solution deposited polycrystalline neodymium-modified Bi4Ti3O12

Nava Setter, Dragan Damjanovic, Marco Cantoni

Thin films of neodymium-modified bismuth titanate Bi3.44Nd0.56Ti3O12 (BNT) were grown on Pt/TiO2/SiO2/Si substrates using chemical solution deposition method. The capacitors made by applying top Au electrodes on BNT films showed significantly improved valu ...

2002

Evidence for forward domain growth being rate-limiting step in polarization switching in < 111 >-oriented-Pb(Zr0.45Ti0.55)O-3 thin-film capacitors

Nava Setter

We studied polarization switching of 295 nm thick -oriented-Pb(Zr0.45Ti0.55)O-3 (PZT) thin-film capacitors through a polarization hysteresis loop and piezoelectric force microscopy (PFM) on top of the Pt electrode. Positive voltage pulses of 450 kV/cm ...

2002

Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Serguei Okhonin

This paper addresses the problem of time-dependent dielectric breakdown of Pb(Zr,Ti)O-3 (PZT) thin films. It is shown by using constant-current breakdown measurements, that for PZT film capacitors with Pt and SrRuO3 (SRO) electrodes the breakdown onset is ...

2001

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The domain nucleation and growth during polarization switching in Pb(Zr,Ti)O-3 (PZT) ferroelectric thin film capacitors with Pt top (TE) and bottom electrodes (BE) were studied by means of atomic force microscopy (AFM). The experimental configuration used ...

1999

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The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration si ...

1999

The effect of near-by-electrode charge injection on switching of a thin film ferroelectric capacitor is theoretically analyzed. We develop a model of switching affected by charge injection through a surface dielectric layer to calculate the coercive field ...

1999

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Mechanisms of polarization switching and fatigue in (Pb, La)(Zr, Ti)O-3 (PLZT) films are studied by comparative analysis of degradation and leakage conduction of PLZT capacitors with Pt, SrRuO3 (SRO), and layered Pt/SRO (80/5 nm) electrodes. It is found th ...

1999

Microscopic observation of "region by region" polarisation domains freezing during fatigue of the Pt-PZT-Pt system

Nava Setter, Alexander Tagantsev, Enrico Colla

It was recently suggested, basing on the analysis of a wide range of macroscopic experimental results([1-4]), that fatigue in ferroelectric thin film capacitors, particularly in the case of PZT with metallic electrodes (Pt), must be related to the freezing ...

1998

A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effec ...

1998