Publication

Contribution of spontaneous polarization and its fluctuations to refraction of light in ferroelectrics

Publications associées (35)

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Thin-film-specific elastic effects in ferroelectric domain structures

Konstantin Shapovalov

An essential feature of ferroelectric thin films is the presence in them of domain structures. In order to efficiently implement ferroelectric films into potential new ferroelectrics-based devices, it is of high interest to understand the behaviour of doma ...

EPFL2016

Formation of charged ferroelectric domain walls with controlled periodicity

Nava Setter, Alexander Tagantsev, Dragan Damjanovic, Tomas Sluka, Petr Bednyakov

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...

Nature Publishing Group2015

Strain response of polycrystalline barium titanate (BaTiO3) was investigated under high unipolar electric field (0 to 4 kV/mm) and compressive stress (0 to 400 MPa) in the temperature range from 25 to 160 degrees C. In the vicinity of the Curie point (T-C) ...

American Institute of Physics2012

Macroscopic Theory of Charged Domain Walls in Ferroelectrics

Maxim Gureev

This thesis consists of a theoretical analysis of charged domain walls in ferroelectrics based on Landau theory and the theory of semiconductors. First, the internal structure of a 180-degree charged domain wall is considered. It is shown that different re ...

EPFL2012

30nm Mettalic Slot Array for Sensing: Theoretical and Experimental Study

Hans Peter Herzig, Qing Tan, Armando Cosentino

The simulation, fabrication and characterization of a metallic slot grating on a silicon waveguide (30 nm slot width for a period of 500 nm) are presented [1]. This device is attempting to be a sensor for refractive index variation measurements with theore ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

Strong ferroelectric domain-wall pinning in BiFeO3 ceramics

Nava Setter, Dragan Damjanovic, Marija Kosec

We have studied the polarization-electric-field hysteresis, the dielectric permittivity dispersion, the piezoelectric properties, the electric-field-induced strain, and the interrelations between these properties for bismuth ferrite (BiFeO3) ceramics. The ...

American Institute of Physics2010

Polarisation reversal in ferroelectric PVDF and PZT films

Roman Gysel

Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...

EPFL2008

The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...

EPFL2007

Electric-field-, temperature-, and stress-induced phase transitions in relaxor ferroelectric single crystals

Nava Setter, Dragan Damjanovic, Matthew Davis

Electric-field-induced phase transitions have been evidenced by macroscopic strain measurements at temperatures between 25 degrees C and 100 degrees C in 001-poled (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) [(PMN-xPT);x=0.25,0.305,0.31] and (1-x)Pb(Zn1/3Nb2/3)O ...

2006

Phase transitions, anisotropy and domain engineering

Matthew Davis

Relaxor-ferroelectric single crystals PZN-xPT [(1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3] and PMN-xPT [(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3] continue to attract much interest due to their anomalously large piezoelectric properties (d33 > 2000 pm/V; k33 > 90%) when poled ("do ...

EPFL2006