Surface Kinetics of Titanium Isopropoxide in High Vacuum Chemical Vapor Deposition

Understanding the surface kinetics of precursor decomposition during thin film formation represents a key aspect in the understanding and engineering of chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes. The determination of activation energies of the surface reaction steps, however, is often challenging because it requires precise knowledge of precursor impinging rates. Afterward, the kinetics can be investigated by comparing the amount of deposited material with the absolute precursor flow. Ideally, the experimental equipment allows a distinction between gas phase and surface reactions. Both are difficult to achieve in conventional CVD processes. A high vacuum environment, however, enables the quantitative prediction of precursor impinging rates due to the ballistic nature of precursor transport; additionally precursor gas phase reactions do not occur. We investigated the surface reaction kinetics of titanium isopropoxide (TTIP) in the high vacuum CVD of titanium dioxide. Additionally, we have investigated the addition of water as a reactani to the deposition process. In this way, even surface kinetics relevant for ALD processes could be investigated. Here, we propose a comprehensive surface kinetic model of titanium isopropoxide surface reactions including hydrolytic and pyrolytic reactions. The surface kinetic model was fitted to 363 data points taken from combinatorial experiments covering a wide range of deposition parameters (substrate temperature, 175-610 degrees C; TTIP impinging rate, 0.1 x 10(15)-6.0 x 10(15)cm(-2) s(-1); water impinging rate, 4.5 x 10(16)cm(-2) s(-1)), which enabled us to derive activation energies for desorption, hydrolysis, and pyrolysis.

Surface Kinetics of Titanium Isopropoxide in Chemical Vapor Deposition of Titanium Dioxide and Barium Titanate

Michael Oliver Reinke

All chemical vapor deposition (CVD) processes rely on the adsorption and decomposition of precursors on a substrate to deposit the desired material. The growth rate of the film is determined by the surface kinetics of the utilized precursor molecules and generally dependent on precursor concentration and substrate temperature. Investigation of surface kinetics is challenging in CVD techniques as precise quantification of the precursor concentration (or precursor flux) is difficult. Furthermore gas-phase reactions can influence the film growth. In this thesis we develop a method to characterize precursor surface kinetics during deposition processes using high vacuum chemical vapor deposition (HV-CVD). In a high vacuum environment precursor transport takes place in the molecular flow regime and gas phase reactions are efficiently suppressed. Furthermore precursor impinging rates can be calculated using a relatively simple mathematical model. Relating the number of impinging precursor molecules to the absolute amount of deposited material allows investigating the deposition kinetics in a very precise manner. We apply this method to characterize titanium isopropoxide and water in chemical vapor deposition conditions over large parameter range. Fitting a surface kinetic model to experimental data enabled us to derive activation energies for desorption, hydrolysis and pyrolysis. The surface kinetic model is then applied to characterize the TTIP based HV-CVD and ALD process of titanium dioxide in detail. Furthermore, we have studied the surface kinetics of TTIP when the substrate is additionally exposed to barium precursors aiming to deposit barium titanate. We demonstrate that HV-CVD is capable of growing epitaxial barium titanate films on magnesium oxide, strontium titanate and strontium titanate buffered silicon substrates at 400°C process temperature; this is the lowest reported substrate temperature for epitaxial growth of barium titanate by CVD. Finally, we investigate two experimental techniques to selectively grow titanium dioxide: a lift-off technique based on shading masks and a surface passivation technique, based on the local modification of surface reactions. We will demonstrate, that the surface kinetics of TTIP are not optimal for the local deposition of titanium dioxide in the first case, but that HV-CVD is capable of enhancing selectivity compared to previously reported values in the latter approach.

EPFL2016

Selective Growth of Titanium Dioxide by Low-Temperature Chemical Vapor Deposition

Patrik Hoffmann, Yury Kuzminykh, Michael Oliver Reinke

A key factor in engineering integrated optical devices such as electro-optic switches or waveguides is the patterning of thin films into specific geometries. In particular for functional oxides, etching processes are usually developed to a much lower extent than for silicon or silicon dioxide; therefore, selective area deposition techniques are of high interest for these materials. We report the selective area deposition of titanium dioxide using titanium isopropoxide and water in a high-vacuum chemical vapor deposition (HV-CVD) process at a substrate temperature of 225 °C. Here—contrary to conventional thermal CVD processes—only hydrolysis of the precursor on the surface drives the film growth as the thermal energy is not sufficient to thermally decompose the precursor. Local modification of the substrate surface energy by perfluoroalkylsilanization leads to a reduced surface residence time of the precursors and, consequently, to lower reaction rate and a prolonged incubation period before nucleation occurs, hence, enabling selective area growth. We discuss the dependence of the incubation time and the selectivity of the deposition process on the presence of the perfluoroalkylsilanization layer and on the precursor impinging rates—with selectivity, we refer to the difference of desired material deposition, before nucleation occurs in the undesired regions. The highest measured selectivity reached (99 ± 5) nm, a factor of 3 superior than previously reported in an atomic layer deposition process using the same chemistry. Furthermore, resolution of the obtained patterns will be discussed and illustrated.

Amer Chemical Soc2015

High vacuum chemical vapor deposition (HV-CVD) of alumina thin films

Xavier Multone

We analyzed along this work the feasibility to produce high quality alumina thin films by High Vacuum Chemical Vapor Deposition (HV-CVD). We study the influence of various parameters on the growth process and on the film quality, such as substrate temperature, gas flow or pressure. We aim to highlight the advantages and the limitations of the HV-CVD technique. A high vacuum CVD reactor has been designed, built and optimized. A novel effusing source has been designed to guarantee a molecules distribution uniformity of 95% on the substrate surface. The main technical challenges faced were to reach the maximum substrate temperature in vacuum, to control the precursor flux and to control the temperature of the gas lines to avoid condensation. For the first time, films of Al2O3 are obtained by HV-CVD from aluminum isopropoxide as precursor in a novel HV-CVD reactor. The HV-CVD approach stands out of all the other CVD methods as it allows excellent prediction of growth rates and film thickness homogeneities if the decomposition probability of the precursor is once determined. In this work, the latter was determined to increase with increasing substrate temperature to 0.2, further increase of temperature reduces the decomposition probability due to increased desorption rate. Pure alumina films are obtained in a reliable and reproducible way. The presence of oxidizing agents, as decomposition partners, reduces the activation energy of deposition process from 33.1 ± 8.2 kJ/mol to 11.4 ± 5.3 kJ/mol in presence of sufficient oxidizing agent. The Al2O3 films are growing at deposition rate from 1 to 50 nm/min. It has been found that, the lower the deposition temperature, the higher the density of the deposited films therefore the higher refractive index. The index of refraction varies from 1.65 ± 0.01 to 1.35 ± 0.01 at 632 nm wavelength from lowest to highest deposition temperature. At low deposition temperature, Al2O3 can contain residual OH-groups and Al=O entities. This content is independent of the total flow rates of the precursor in the range of 5·1015 molecules/cm2·s to 3·1016 molecules/cm2·s impinging on the substrate. Substrate effects have not been observed in the limited range of tests on natural oxidized silicon, 3 µm SiO2 on silicon, quartz, stainless steel, fused silica and 100 nm silicon nitride on top of silicon. The chemical composition of the deposited alumina films measured by EDX and XPS is nearly stoichiometric with 35 ± 5 at% Al and 65 ± 5 at% O, without carbon contamination. Remaining hydrogen in the films has not been studied in detail, but the difference of OH- absorption peaks by FTIR indicates that, a low temperature deposition, hydrogen incorporation is possible. Concerning the optical properties of the HV-CVD deposited films, absorption is very low from 250 nm to 1800 nm wavelength, but due to the porosity and granular structure of the films, light scattering can take place. But propagation loss smaller than 2 dB/cm were measured in channel waveguides fabricated from the HV-CVD alumina films. Planar and channel waveguides demonstrate good guiding properties at 670 nm and 1.55 µm, as well. This work also opens new possibilities to deposit in situ local structures of or in transparent alumina on large surface. Light induced high vacuum chemical vapor deposition of alumina microstructures by 248 nm excimer laser is presented and shows an activation energy of 5.2 ± 0.4 kJ/mol, much smaller than for thermal deposition. The influence of the fluence and the repetition rate is discussed. Electron beam assisted HV-CVD of alumina is demonstrated and proves the feasibility of in situ structuration under HV-CVD conditions.