Electroluminescent measurement of the internal quantum efficiency of light emitting diodes
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Novel light-emitting devices and micro-optical-circuit elements will rely upon understanding and control of light-matter interaction at the nanoscale. Recent advances in nanofabrication and micro-processing make it possible to develop integrable solid-stat ...
The enhancement of the extraction efficiency in light emitting diodes (LEDs) through the use of photonic crystals (PhCs) requires a structure design that optimizes the interaction of the guided modes with the PhCs. The main optimization parameters are rela ...
The light extraction efficiency of photonic-crystal (PhC) light-emitting diodes (LEDs) relies on the competition between the PhC extraction and dissipation mechanisms of the guided light within the LED. This work presents the experimental determination of ...
This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs). ...
We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...
The near-IR luminescence properties of two ErIII-containing coordination polymers, namely, [Er(btc)(H2O)5·3.5H2O] [(btc)3– = 1,3,5-benzenetricarboxylate] and [Er2(bdc)3- (H2O)4] [(bdc)2– = 1,4-benzenedicarboxylate] were investigated with the aim of testing ...
This invention pertains to light emitting materials comprising novel ortho-metalated transition metal complexes [C^N] 2 ML comprising two orthometalated ligands having imidazole moieties and an ancillary ligand of ²-diketonate type. It has been surprisingl ...
Thin-film InGaN photonic crystal (PhC) light-emitting diodes (LEDs) with a total semiconductor thickness of either 800 nm or 3.45 mu m were fabricated and characterized. Increased directional radiance relative to Lambertian emission was observed for both c ...
The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...
Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction ...